IXFL132N50P3 IXYS, IXFL132N50P3 Datasheet

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IXFL132N50P3

Manufacturer Part Number
IXFL132N50P3
Description
Polar3 HiperFETS
Manufacturer
IXYS
Datasheet

Specifications of IXFL132N50P3

Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
63
Rds(on), Max, Tj=25°c, (?)
0.043
Ciss, Typ, (pf)
18600
Qg, Typ, (nc)
250
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
520
Rthjc, Max, (ºc/w)
0.24
Package Style
ISOPLUS264™
Polar3
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
F
V
Weight
Symbol
(T
BV
V
I
I
R
© 2011 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
J
DSS
= 25°C Unless Otherwise Specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force
50/60 Hz, RMS
I
V
V
V
V
V
Test Conditions
S
ISOL
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
HiPerFET
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
≤ 1 mA
= 0V, I
= V
= ±30V, V
= V
= 10V, I
DM
, V
GS
DSS
, I
DD
D
, V
D
D
= 3mA
≤ V
= 8mA
= 66A, Note 1
GS
DS
= 0V
DSS
= 0V
t = 1 min
t = 1 s
, T
TM
J
GS
≤ 150°C
= 1MΩ
T
Advance Technical Information
J
= 125°C
IXFL132N50P3
JM
40..120 / 9..27
500
3.0
Min.
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
2500
3000
Typ.
500
500
±30
±40
330
520
150
300
260
63
66
35
3
8
±200 nA
Max.
5.0
50 μA
43 mΩ
6 mA
V/ns
N/lb.
V~
V~
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
Features
Advantages
Applications
V
I
R
t
ISOPLUS264
G = Gate
S = Source
D25
rr
Silicon Chip on Direct-Copper-Bond
Substrate
- High Power Dissipation
- Isolated Mounting Surface
- 2500V Electrical Isolation
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Low R
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
Uninterrupted Power Supplies
AC Motor Drives
High Speed Power Switching
Applications
Easy to Mount
Space Savings
DS(on)
DSS
G
D
DS(on)
S
≤ ≤ ≤ ≤ ≤
=
=
≤ ≤ ≤ ≤ ≤
and Q
D
G
43mΩ Ω Ω Ω Ω
500V
63A
250ns
= Drain
Isolated Tab
DS100409(11/11)

Related parts for IXFL132N50P3

IXFL132N50P3 Summary of contents

Page 1

... GSS DSS DS DSS 10V 66A, Note 1 DS(on © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXFL132N50P3 Maximum Ratings 500 = 1MΩ 500 GS ±30 ±40 63 330 ≤ 150° 520 -55 ... +150 150 -55 ... +150 300 260 40 ...

Page 2

... I = 66A 90 DSS D 52 0.15 Characteristic Values Min. Typ. JM 1.9 16.4 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFL132N50P3 ISOPLUS264 (IXFL) OUTLINE Max Ω 0.24 °C/W °C/W Max. 132 A 530 A 1.5 V 250 ns μC A 6,404,065 B1 ...

Page 3

... Value vs 125º 25º 150 200 250 IXFL132N50P3 Fig. 2. Extended Output Characteristics @ T 250 V = 10V GS 8V 200 7V 150 100 Volts DS Fig Normalized to I DS(on) Junction Temperature 3.2 ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions 125ºC J 25ºC - 40ºC 6.0 6.5 7.0 7.5 - Volts T = 25ºC J 0.9 1.0 1.1 1.2 1.3 1.4 1000 C iss 100 C oss C rss IXFL132N50P3 Fig. 8. Transconductance 200 T 180 160 140 120 100 100 120 I - Amperes D Fig. 10. Gate Charge 250V 9 ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance Fig. 13. Maximum Transient Thermal Impedance aaaa 0.01 0.1 Pulse Width - Seconds IXFL132N50P3 1 10 IXYS REF: F_132N50P3(K9)03-17-11 ...

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