IXFP4N100PM IXYS, IXFP4N100PM Datasheet

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IXFP4N100PM

Manufacturer Part Number
IXFP4N100PM
Description
Manufacturer
IXYS
Datasheet

Specifications of IXFP4N100PM

Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
2.5
Rds(on), Max, Tj=25°c, (?)
3.3
Ciss, Typ, (pf)
1456
Qg, Typ, (nc)
26
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
57
Rthjc, Max, (ºc/w)
2.2
Polar
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2010 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TM
HiperFET
T
T
Transient
T
T
T
T
I
T
1.6 mm (0.062 in.) from Case for 10 s
Plastic Body for 10 s
Mounting Torque
V
V
V
V
V
Test Conditions
Continuous
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 25°C to 150°C
= 25°C to 150°C, R
= 0V, I
= V
= ±20V, V
= V
= 10V, I
DM
GS
, V
DSS
, I
D
, V
DD
D
D
= 250μA
= 250μA
= 2A, Note 1
≤ V
GS
DS
= 0V
= 0V
DSS
TM
, T
J
GS
=150°C
= 1 MΩ
Advance Technical Information
T
J
= 125°C
JM
IXFP4N100PM
1000
Min.
3.0
Characteristic Values
- 55 ... +150
- 55 ... +150
Maximum Ratings
1.13/10
Typ.
1000
1000
± 20
± 30
150
300
260
200
2.5
2.5
8.0
4.0
10
57
Nm/lb.in.
Max.
±100 nA
750 μA
6.0
3.3
10 μA
V/ns
mJ
°C
°C
°C
°C
°C
W
V
V
Ω
V
V
V
V
A
A
A
g
V
I
R
OVERMOLDED
G = Gate
S = Source
Features
Advantages
Applications
D25
Plastic Overmolded Tab for Electrical
Isolation
Avalanche Rated
Fast Intrinsic Diode
Low Package Inductance
High Power Density
Easy to Mount
Space Savings
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
DS(on)
DSS
G
D S
= 2.5A
= 1000V
≤ ≤ ≤ ≤ ≤
D = Drain
3.3Ω Ω Ω Ω Ω
DS100295(11/10)

Related parts for IXFP4N100PM

IXFP4N100PM Summary of contents

Page 1

... GSS DSS DS DSS 10V 2A, Note 1 DS(on © 2010 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXFP4N100PM Maximum Ratings 1000 = 1 MΩ 1000 GS ± 20 ± 30 2.5 8.0 JM 4.0 200 =150° ... +150 150 - 55 ... +150 300 260 1 ...

Page 2

... DSS D 12 Characteristic Values Min. Typ. JM 0.34 5.30 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFP4N100PM ISOLATED TO-220 (IXFP...M) Max Ω 2.2 °C/W Terminals Gate 2 - Drain 3 - Source Max 1.3 ...

Page 3

... Value vs 125ºC J 2 25º -50 IXFP4N100PM Fig. 2. Extended Output Characteristics @ 10V Volts DS Fig Normalized to I DS(on) D Junction Temperature V = 10V GS - Degrees Centigrade J Fig ...

Page 4

... V - Volts DS IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 4.5 3.5 = 125ºC J 25ºC - 40ºC 2.5 1.5 0.5 5.5 6.0 6.5 7 25ºC J 0.8 0.9 1.0 1.1 0.1 0. IXFP4N100PM Fig. 8. Transconductance 40º 0.5 1 1 Amperes D Fig. 10. Gate Charge 500V 10mA ...

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