IXFV10N100PS IXYS, IXFV10N100PS Datasheet

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IXFV10N100PS

Manufacturer Part Number
IXFV10N100PS
Description
Manufacturer
IXYS
Datasheet

Specifications of IXFV10N100PS

Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
10
Rds(on), Max, Tj=25°c, (?)
1.4
Ciss, Typ, (pf)
3030
Qg, Typ, (nc)
58
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
380
Rthjc, Max, (ºc/w)
0.33
Package Style
PLUS220
Polar
HiPerFET
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
M
F
Weight
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
TM
Power MOSFET
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
Maximum lead temperature for soldering
Plastic body for 10s
Mounting torque (TO-247)
Mounting force (PLUS220)
TO-247
PLUS 220 types
Test Conditions
V
V
V
V
V
V
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
TM
= 0V, I
= V
= ± 30V, V
= V
= 0V
= 10V, I
DM
, V
GS
DSS
, I
D
DD
D
D
= 1mA
= 1mA
= 0.5 • I
≤ V
DS
DSS
= 0V
, T
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
Preliminary Technical Information
T
J
= 125°C
JM
IXFH10N100P
IXFV10N100P
IXFV10N100PS
11..65/2.5..14.6
1000
-55 ... +150
-55 ... +150
Min.
3.5
Characteristic Values
Maximum Ratings
1.13/10
1000
1000
± 30
± 40
500
380
150
300
260
Typ.
10
25
15
5
6
4
±100 nA
1.25 mA
Max.
Nm/lb.in.
1.4
6.5
25
N/lb.
V/ns
mJ
μA
°C
°C
°C
°C
°C
W
Ω
V
V
V
V
A
A
A
V
V
g
g
Features
Advantages
Applications:
V
I
R
t
PLUS220 (IXFV)
PLUS220SMD (IXFV_S)
TO-247 (IXFH)
G = Gate
S = Source
D25
rr
International standard packages
Fast recovery diode
Avalanche rated
Low package inductance
Switched-mode and resonant-mode
power supplies
DC-DC Converters
Laser Drivers
AC and DC motor drives
Robotics and servo controls
Easy to mount
Space savings
High power density
DS(on)
DSS
G
D
G
= 1000V
= 10A
≤ ≤ ≤ ≤ ≤ 1.4Ω Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 300ns
S
S
D
TAB = Drain
= Drain
D (TAB)
D (TAB)
D (TAB)
DS99922(09/08)

Related parts for IXFV10N100PS

IXFV10N100PS Summary of contents

Page 1

... DSS DS DSS 10V 0.5 • I DS(on © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXFH10N100P IXFV10N100P IXFV10N100PS Maximum Ratings 1000 = 1MΩ 1000 GS ± 30 ± 500 ≤ 150° 380 -55 ... +150 150 -55 ... +150 300 260 1 ...

Page 2

... I 19 DSS D D25 30 0.21 Characteristic Values Min. Typ. JM 7.3 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFH10N100P IXFV10N100P IXFV10N100PS PLUS220 (IXFV) Outline Max Ω 0.33 °C/W °C/W Max TO-247 (IXFH) Outline 1.5 V ...

Page 3

... V = 15V Value 125º 25º IXFH10N100P IXFV10N100P IXFV10N100PS Fig. 2. Extended Output Characteristics @ 25º Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 3.0 2 10V GS 2 ...

Page 4

... T = 25º 0.8 0.9 1.0 1.1 0 1.00 C iss 0.10 C oss C rss 0. 0.00001 IXFH10N100P IXFV10N100P IXFV10N100PS Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge V = 500V 10mA NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0 ...

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