IXFX32N100Q3 IXYS, IXFX32N100Q3 Datasheet

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IXFX32N100Q3

Manufacturer Part Number
IXFX32N100Q3
Description
Q3-Class HiPerFETs
Manufacturer
IXYS
Datasheet

Specifications of IXFX32N100Q3

Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
32
Rds(on), Max, Tj=25°c, (?)
0.32
Ciss, Typ, (pf)
9940
Qg, Typ, (nc)
195
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
1250
Rthjc, Max, (ºc/w)
0.10
Package Style
PLUS247
HiperFET
Power MOSFETs
Q3-Class
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
R
© 2011 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264)
Mounting Force
TO-264
PLUS247
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
TM
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±30V, V
= V
= 10V, I
DM
, V
GS
DSS
, I
DD
D
, V
D
D
= 3mA
≤ V
= 8mA
= 0.5 • I
GS
DS
= 0V
DSS
= 0V
(PLUS247)
, T
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
Preliminary Technical Information
T
J
= 125°C
IXFK32N100Q3
IXFX32N100Q3
JM
20..120 /4.5..27
1000
3.5
Min.
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10
1000
1000
1250
Typ.
±30
±40
150
300
260
32
96
32
50
10
3
6
±200 nA
Nm/lb.in.
Max.
320 mΩ
6.5
50 μA
2 mA
N/lb.
V/ns
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
J
V
I
R
t
TO-264 (IXFK)
PLUS247 (IXFX)
G = Gate
S = Source
Features
Advantages
Applications
D25
rr
Low
Low Package Inductance
Fast Intrinsic Rectifier
Low R
High Power Density
Easy to Mount
Space Savings
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
Temperature and Lighting Controls
DS(on)
DSS
G
G
Intrinsic Gate Resistance
D
S
DS(on)
D
S
≤ ≤ ≤ ≤ ≤
=
=
≤ ≤ ≤ ≤ ≤
and Q
D
Tab = Drain
320mΩ Ω Ω Ω Ω
G
32A
1000V
300ns
= Drain
Tab
Tab
DS100300A(07/11)

Related parts for IXFX32N100Q3

IXFX32N100Q3 Summary of contents

Page 1

... DSS DS DSS 10V 0.5 • I DS(on D25 © 2011 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXFK32N100Q3 IXFX32N100Q3 Maximum Ratings 1000 = 1MΩ 1000 GS ±30 ± ≤ 150° 1250 -55 ... +150 150 -55 ... +150 300 260 1 ...

Page 2

... DSS D D25 54 12 195 , I = 0.5 • DSS D D25 78 0.15 Characteristic Values Min. Typ. JM 1.2 12.3 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFK32N100Q3 IXFX32N100Q3 TO-264 AA Outline Max Ω Dim. Millimeter Min. Max 4.82 5.13 A1 2.54 2.89 A2 2.00 2. 1.12 1.42 b1 2.39 2. ...

Page 3

... 10V 16A Value vs 125º 25º IXFK32N100Q3 IXFX32N100Q3 Fig. 2. Extended Output Characteristics @ Volts DS Fig Normalized to I DS(on) D Junction Temperature 3 10V GS 2.6 2.2 1.8 1.4 1.0 0.6 0.2 -50 - ...

Page 4

... T = 25º 0.8 0.9 1.0 1.1 1.2 100 C iss 10 C oss 1 C rss 0 IXFK32N100Q3 IXFX32N100Q3 Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge V = 500V 16A 10mA 100 120 Q - NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance Fig. 13. Maximum Transient Thermal Impedance aaaaa 0.01 Pulse Width - Seconds IXFK32N100Q3 IXFX32N100Q3 0 IXYS REF: F_32N100Q3(Q8) 7-21-11-A ...

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