IXTA80N12T2 IXYS, IXTA80N12T2 Datasheet

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IXTA80N12T2

Manufacturer Part Number
IXTA80N12T2
Description
TrenchT2 MOSFETs
Manufacturer
IXYS
Datasheet

Specifications of IXTA80N12T2

Vdss, Max, (v)
120
Id(cont), Tc=25°c, (a)
80
Rds(on), Max, Tj=25°c, (?)
0.017
Ciss, Typ, (pf)
4740
Qg, Typ, (nc)
80
Trr, Typ, (ns)
90
Pd, (w)
325
Rthjc, Max, (k/w)
0.46
Package Style
TO-263
TrenchT2
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol
V
V
V
V
I
I
I
E
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2010 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
sold
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 Seconds
Mounting Torque (TO-220)
TO-263
TO-220
V
V
V
V
V
Test Conditions
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
TM
= 0V, I
= V
= ± 20V, V
= V
= 10V, I
GS
DSS
, I
D
, V
D
D
= 250μA
= 250μA
= 0.5 • I
GS
DS
= 0V
= 0V
D25
GS
, Notes 1, 2
= 1MΩ
Advance Technical Information
T
J
= 150°C
JM
IXTA80N12T2
IXTP80N12T2
-55 ... +175
-55 ... +175
Characteristic Values
120
Min.
2.0
Maximum Ratings
1.13 / 10
120
120
±20
±30
200
400
325
175
300
260
2.5
3.0
Typ.
80
40
±200 nA
175
Nm/lb.in.
Max.
4.0
17 mΩ
5
mJ
μA
μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
V
I
R
TO-263 AA (IXTA)
TO-220AB (IXTP)
G = Gate
S = Source
Features
Advantages
Applications
D25
International Standard Packages
175°C Operating Temperature
Avalanche Rated
Fast Intrinsic Rectifier
High Current Handling Capability
Low R
Easy to Mount
Space Savings
High Power Density
Synchronous Rectification
DC/DC Converters and Off-Line UPS
Primary- Side Switch
High Current Switching Applications
DS(on)
DSS
DS(on)
G
D S
= 120V
= 80A
≤ ≤ ≤ ≤ ≤
G
D
Tab = Drain
S
17mΩ Ω Ω Ω Ω
= Drain
D (Tab)
D (Tab)
DS100240(03/10)

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IXTA80N12T2 Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2010 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXTA80N12T2 IXTP80N12T2 Maximum Ratings 120 = 1MΩ 120 GS ±20 ±30 80 200 JM 40 400 325 -55 ... +175 175 -55 ... +175 300 260 1. 2.5 3.0 Characteristic Values Min ...

Page 2

... DSS D D25 20 0.50 Characteristic Values Min. Typ 180 Kelvin test contact DS(on) 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA80N12T2 IXTP80N12T2 TO-263 Outline Max 0.46 °C/W °C/W Max 320 A TO-220 Outline 1 ...

Page 3

... 80A D -50 - Degrees Centigrade J Fig. 6. Drain Current vs. Case Temperature -50 - Degrees Centigrade C IXTA80N12T2 IXTP80N12T2 = 25º 40A Value vs 40A D 100 125 150 175 100 125 150 175 ...

Page 4

... T = 25º 1.0 1.1 1.2 1.3 1.4 1.5 0 1000 C iss 100 10 C oss 1 C rss 0 IXTA80N12T2 IXTP80N12T2 Fig. 8. Transconductance 100 I - Amperes D Fig. 10. Gate Charge V = 60V 40A 10mA NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area ...

Page 5

... Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance d(off 125º 10V 60V 80A, 40A Ohms G IXTA80N12T2 IXTP80N12T2 80A 105 115 125 350 300 250 200 150 100 ...

Page 6

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 19. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXTA80N12T2 IXTP80N12T2 0.1 1 IXYS REF: IXT_80N12T2 (V4)3-11-10 10 ...

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