IXTA42N15T IXYS, IXTA42N15T Datasheet - Page 2

• Manufacturer Part Number: IXTA42N15T
• Description: Trench MOSFETs
• Manufacturer: IXYS

Specifications of IXTA42N15T

• Vdss, Max, (v): 150
• Id(cont), Tc=25°c, (a): 42
• Rds(on), Max, Tj=25°c, (?): 0.045
• Ciss, Typ, (pf): 1880
• Qg, Typ, (nc): 21
• Trr, Typ, (ns): 100
• Trr, Max, (ns): -
• Pd, (w): 200
• Rthjc, Max, (k/w): 0.75
• Package Style: TO-263

Notes: 1.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
S
SM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCH
g(on)
gs
gd
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
2. On through-hole packages, R
Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
location must be 5mm or less from the package body.
V
Repetitive, Pulse width limited by T
V
Resistive Switching Times
V
R
V
V
I
I
Test Conditions
TO-220
Test Conditions
F
F
DS
GS
GS
GS
GS
G
= 25A, V
= 21A, V
= 10V, I
= 10Ω (External)
= 0V, V
= 15V, V
= 0V
= 10V, V
GS
GS
DS
D
DS
DS
= 0V, -di/dt = 100A/μs, V
= 0.5 • I
= 0V, Note 1
= 25V, f = 1MHz
=0.5 • V
= 0.5 • V
4,835,592
4,881,106
D25
DSS
, Note 1
DSS
4,931,844
5,017,508
5,034,796
, I
, I
DS(on)
D
D
= 0.5 • I
= 0.5 • I
Kelvin test contact
5,049,961
5,063,307
5,187,117
JM
D25
R
D25
= 50V
5,237,481
5,381,025
5,486,715
Min.
Min.
Characteristic Values
Characteristic Values
20
6,162,665
6,259,123 B1
6,306,728 B1
1880
Typ.
Typ.
0.50
255
100
6.0
6.6
37
25
21
33
14
16
50
Max.
Max.
0.75 °C/W
126
1.1
6,404,065 B1
6,534,343
6,583,505
42
°C/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-220 (IXTP) Outline
TO-263 (IXTA) Outline
Pins: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
3 - Source
7,005,734 B2
7,063,975 B2
IXTA42N15T
IXTP42N15T
2 - Drain
4 - Drain
7,157,338B2