IXFH160N15T2 IXYS, IXFH160N15T2 Datasheet - Page 4

• Manufacturer Part Number: IXFH160N15T2
• Description: TrenchT2 HiperFETs
• Manufacturer: IXYS

Specifications of IXFH160N15T2

• Vdss, Max, (v): 150
• Id(cont), Tc=25°c, (a): 160
• Rds(on), Max, Tj=25°c, (?): 0.009
• Ciss, Typ, (pf): 15000
• Qg, Typ, (nc): 253
• Pd, (w): 880
• Rthjc, Max, (k/w): 0.17
• Package Style: TO-247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
350
300
250
200
150
100
200
180
160
140
120
100
100
80
60
40
20
50
10
0
0
3.0
0.2
0
f
= 1 MHz
3.5
5
0.4
Fig. 9. Forward Voltage Drop of
4.0
10
T
0.6
J
Fig. 7. Input Admittance
= 150ºC
Fig. 11. Capacitance
4.5
15
Intrinsic Diode
V
0.8
GS
V
V
SD
DS
- Volts
5.0
- Volts
20
- Volts
T
J
1.0
= 150ºC
- 40ºC
25ºC
T
5.5
25
J
= 25ºC
C iss
C oss
C rss
1.2
6.0
30
1.4
6.5
35
7.0
1.6
40
1000
100
240
200
160
120
0.1
10
10
80
40
9
8
7
6
5
4
3
2
1
0
1
0
0
1
0
R
DS
V
I
I
T
T
Single Pulse
D
G
DS
(
J
20
C
on) Limit
= 80A
= 10mA
= 175ºC
= 25ºC
= 75V
40
Fig. 12. Forward-Bias Safe Operating Area
40
60
80
Fig. 8. Transconductance
10
Fig. 10. Gate Charge
80
Q
G
120
I
- NanoCoulombs
D
V
100
IXFH160N15T2
DS
- Amperes
- Volts
120
T
160
J
= - 40ºC
140
100
25ºC
200
160
150ºC
25µs
100µs
1ms
10ms
DC
180
240
200
1,000
280
220