IXTQ60N20T IXYS, IXTQ60N20T Datasheet

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IXTQ60N20T

Manufacturer Part Number
IXTQ60N20T
Description
Trench MOSFETs
Manufacturer
IXYS
Datasheet

Specifications of IXTQ60N20T

Vdss, Max, (v)
200
Id(cont), Tc=25°c, (a)
60
Rds(on), Max, Tj=25°c, (?)
0.04
Ciss, Typ, (pf)
4530
Qg, Typ, (nc)
73
Trr, Typ, (ns)
118
Trr, Max, (ns)
-
Pd, (w)
500
Rthjc, Max, (k/w)
0.3
Package Style
TO-3P
Trench
Power MOSFET
N-Channel Enhancement Mode
For PDP Drivers
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2010 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
sold
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C Unless Otherwise Specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 Seconds
Mounting Torque (TO-220 &TO-3P)
TO-263
TO-220
TO-3P
V
V
V
V
V
Test Conditions
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
= 0V, I
= V
= ± 20V, V
= V
= 10V, I
GS
DSS
, I
D
, V
D
D
= 250μA
= 250μA
= 0.5 • I
GS
DS
= 0V
= 0V
D25
GS
, Note 1
= 1MΩ
T
J
= 150°C
JM
IXTA60N20T
IXTQ60N20T
IXTP60N20T
-55 ... +175
-55 ... +175
Characteristic Values
200
3.0
Min.
Maximum Ratings
1.13 / 10
200
200
±20
±30
150
700
500
175
300
260
2.5
3.0
5.5
Typ.
60
30
32
±200 nA
Nm/lb.in.
Max.
250 μA
5.0
40 mΩ
1 μA
mJ
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
g
V
I
R
TO-263 AA (IXTA)
TO-220AB (IXTP)
TO-3P (IXTQ)
G = Gate
S = Source
Features
Advantages
Applications
D25
High Current Handling Capability
175°C Operating Temperature
Avalanche Rated
Fast Intrinsic Rectifier
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
Low R
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
G
D
DS(on)
G
S
D S
= 200V
= 60A
≤ ≤ ≤ ≤ ≤
G
D
Tab = Drain
40mΩ Ω Ω Ω Ω
S
D (Tab)
D (Tab)
D (Tab)
= Drain
DS99359B(7/10)

Related parts for IXTQ60N20T

IXTQ60N20T Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2010 IXYS CORPORATION, All Rights Reserved IXTA60N20T IXTP60N20T IXTQ60N20T Maximum Ratings 200 = 1MΩ 200 GS ±20 ±30 60 150 JM 30 700 500 -55 ... +175 175 -55 ... +175 300 260 1. 2.5 3.0 5.5 Characteristic Values Min. ...

Page 2

... L3 1.27 1.78 .050 .070 L4 0 0.13 0 .005 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA60N20T IXTP60N20T IXTQ60N20T TO-220 (IXTP) Outline Max Pins Gate 3 - Source nC nC 0.30 °C/W °C/W °C/W Max 240 A 1.3 V TO-3P (IXTQ) Outline ...

Page 3

... GS 3.0 2.6 2.2 1.8 1.4 1.0 0.6 0.2 -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature -50 - Degrees Centigrade C IXTQ60N20T = 25º 30A Value vs 60A 30A D 100 125 150 175 100 125 150 175 ...

Page 4

... I - Amperes D Fig. 10. Gate Charge V = 100V 30A 10mA NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0.0001 0.001 0.01 Pulse Width - Second IXTQ60N20T 40ºC J 25ºC 150ºC 100 120 140 0.1 1 IXYS REF: T_60N20T(5G)02-10-10 ...

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