IXTC96N25T IXYS, IXTC96N25T Datasheet

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IXTC96N25T

Manufacturer Part Number
IXTC96N25T
Description
Trench MOSFETs
Manufacturer
IXYS
Datasheet

Specifications of IXTC96N25T

Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
40
Rds(on), Max, Tj=25°c, (?)
0.031
Ciss, Typ, (pf)
6100
Qg, Typ, (nc)
114
Trr, Typ, (ns)
158
Trr, Max, (ns)
-
Pd, (w)
147
Rthjc, Max, (k/w)
0.85
Package Style
ISOPLUSS220
Trench Gate
Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
E
P
T
T
T
T
T
V
F
Weight
Symbol
(T
BV
V
I
I
R
© 2007 IXYS CORPORATION, All rights reserved
D25
DM
AS
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSM
AS
D
ISOL
GS(th)
DS(on)
J
DSS
= 25°C unless otherwise specified)
Test Conditions
T
T
Transient
T
T
T
T
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
50/60Hz, t = 1 minute, I
Mounting force
V
V
V
V
V
V
Test Conditions
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 0V, I
= V
= ± 20V, V
= V
= 0V
= 10V, I
GS
DSS
, I
D
D
D
= 250μA
= 1mA
= 48A, Note 1
DS
= 0V
GS
ISOL
= 1MΩ
Preliminary Technical Information
< 1mA, RMS
T
J
= 125°C
JM
IXTC96N25T
11..65 / 2.5..14.6
250
Min.
Characteristic Values
-55 ... +150
-55 ... +150
3
Maximum Ratings
Typ.
2500
27
± 30
250
250
147
150
300
260
230
40
5
2
2
± 200
Max.
250
31 mΩ
5
5
N/lb.
μA
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
A
A
A
V
V
V
g
J
V
I
R
ISOPLUS220 (IXTC)
G = Gate
S = Source
Features
Advantages
Applications
D25
Silicon chip on Direct-Copper-Bond
substrate
Isolated mounting surface
2500V electrical isolation
Low drain to tab capacitance (< 30pF)
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Uninterruptible power supplies
High speed power switching
applications
Easy assembly
Space savings
High power density
DS(on)
DSS
G
D
E153432
S
= 40A
= 250V
≤ ≤ ≤ ≤ ≤
D = Drain
31mΩ Ω Ω Ω Ω
Isolated back
DS99915(10/07)
surface

Related parts for IXTC96N25T

IXTC96N25T Summary of contents

Page 1

... GSS DSS DS DSS 10V 48A, Note 1 DS(on © 2007 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTC96N25T Maximum Ratings 250 = 1MΩ 250 GS ± 230 147 -55 ... +150 150 -55 ... +150 300 260 < 1mA, RMS 2500 ISOL 11 ...

Page 2

... Characteristic Values Min. Typ. JM 158 23 1.8 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTC96N25T Max. ISOPLUS220 (IXTC) Outline 1.Gate 3.Sourc nC Note: Bottom heatsink (Pin electrically isolated from Pins 1, 2 and 3. 0.85 °C/W °C/W Max ...

Page 3

... DS(on) vs. Junction Temperature 3 10V GS 2.8 2 96A D 2.0 1.6 1.2 0.8 0.4 -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature -50 - Degrees Centigrade C IXTC96N25T 48A Value 48A D 75 100 125 150 75 100 125 150 ...

Page 4

... Fig. 10. Gate Charge 125V 25A 10mA NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0.0001 0.001 0.01 0.1 Pulse Width - Seconds IXTC96N25T = - 40ºC 25ºC 125ºC 120 140 160 80 90 100 110 120 1 10 ...

Page 5

... Switching Times vs. Gate Resistance d(off 125º 15V 125V 48A, 96A Ohms G IXTC96N25T T = 25º 125º 100 d(off) = 15V 105 115 125 160 ...

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