IXTV86N25T IXYS, IXTV86N25T Datasheet

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IXTV86N25T

Manufacturer Part Number
IXTV86N25T
Description
Trench MOSFETs
Manufacturer
IXYS
Datasheet

Specifications of IXTV86N25T

Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
86
Rds(on), Max, Tj=25°c, (?)
0.037
Ciss, Typ, (pf)
5330
Qg, Typ, (nc)
105
Trr, Typ, (ns)
156
Trr, Max, (ns)
-
Pd, (w)
540
Rthjc, Max, (k/w)
0.23
Package Style
PLUS220
Trench Gate
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
I
E
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
R
© 2007 IXYS CORPORATION, All rights reserved
D25
LRMS
DM
AS
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C unless otherwise specified)
T
T
Transient
T
Lead Current Limit, RMS
T
T
T
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-247 & TO-3P)
Mounting force (PLUS220)
TO-247
TO-3P
PLUS220
V
V
V
V
V
V
Test Conditions
Test Conditions
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 0V, I
= V
= ± 20V, V
= V
= 0V
= 10V, I
GS
DSS
, I
D
D
D
= 250μA
= 1mA
= 0.5 • I
DS
= 0V
D25
GS
, Notes 1, 2
= 1MΩ
Preliminary Technical Information
T
J
= 125°C
JM
IXTH86N25T
IXTQ86N25T
IXTV86N25T
11..65 / 2.5..14.6
Characteristic Values
-55 ... +150
-55 ... +150
250
Min.
Maximum Ratings
1.13 / 10
3
± 30
250
250
190
540
150
300
260
1.5
6.0
5.5
4.0
86
75
10
Typ.
± 200 nA
Nm/lb.in.
250 μA
Max.
37 mΩ
5
3 μA
N/lb.
°C
°C
°C
°C
°C
W
V
V
V
A
A
A
A
V
V
g
g
g
J
TO-247 (IXTH)
TO-3P (IXTQ)
PLUS220 (IXTV)
V
I
R
Features
Advantages
Applications
D25
Avalanche rated
International standard packages
Low package inductance
- easy to drive and to protect
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Uninterruptible power supplies
Easy to mount
Space savings
High power density
DS(on)
DSS
G
D
G = Gate
S = Source
G
G
S
D
= 250V
= 86A
D
≤ ≤ ≤ ≤ ≤
S
S
37mΩ Ω Ω Ω Ω
D = Drain
TAB = Drain
DS99784A(10/07)
(TAB
(TAB)
(TAB)

Related parts for IXTV86N25T

IXTV86N25T Summary of contents

Page 1

... GSS DSS DS DSS 0.5 • 10V, I DS(on D25 © 2007 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTH86N25T IXTQ86N25T IXTV86N25T Maximum Ratings 250 = 1MΩ 250 GS ± 190 JM 10 1.5 540 -55 ... +150 150 -55 ... +150 300 260 1. 11..65 / 2.5..14.6 6.0 5.5 4.0 Characteristic Values Min ...

Page 2

... R 4.32 S 6.15 BSC 1 TO-3P (IXTQ) Outline A μC Pins Gate 3 - Source 4, TAB - Drain 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXTV86N25T Drain Tab - Drain Inches Max. Min. Max. 5.3 .185 .209 2.54 .087 .102 2.6 .059 .098 1.4 .040 .055 2.13 .065 ...

Page 3

... I = 86A D 1.8 1.4 1 0.6 0.2 -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature 90 External Lead Current Limit -50 - Degrees Centigrade C IXTV86N25T 43A Value 43A D 75 100 125 150 75 100 125 150 ...

Page 4

... I - Amperes D Fig. 10. Gate Charge 125V 25A 10mA NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds IXTV86N25T 100 100 110 1 10 ...

Page 5

... T = 125º 15V 125V 43A, 86A Ohms G IXTV86N25T = 25º 125º 105 115 125 250 225 200 175 150 125 100 ...

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