IXFZ140N25T IXYS, IXFZ140N25T Datasheet

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IXFZ140N25T

Manufacturer Part Number
IXFZ140N25T
Description
Trench HiperFETs
Manufacturer
IXYS
Datasheet

Specifications of IXFZ140N25T

Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
100
Rds(on), Max, Tj=25°c, (?)
0.017
Ciss, Typ, (pf)
19000
Qg, Typ, (nc)
255
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
445
Rthjc, Max, (k/w)
0.28
Package Style
DE475
GigaMOS
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
P
dv/dt
T
T
T
V
T
T
F
Weight
Symbol
(T
BV
V
I
I
R
© 2010 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
J
DSS
= 25°C, Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
50/60 Hz, RMS
I
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force
V
V
V
V
V
Test Conditions
S
ISOL
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
≤ I
TM
≤ 1mA
= 0V, I
= V
= ±20V, V
= V
= 10V, I
DM
HiperFET
GS
, V
DSS
, I
DD
D
, V
D
D
= 3mA
≤ V
= 4mA
= 60A, Note 1
GS
DS
= 0V
DSS
= 0V
, T
t = 1 minute
t = 1 second
J
GS
≤ 150°C
TM
= 1MΩ
Advance Technical Information
T
J
= 125°C
JM
IXFZ140N25T
20..120 / 4.5..27
Min.
Characteristic Values
2.5
250
-55 ... +150
-55 ... +150
Maximum Ratings
2500
3000
100
250
250
±20
±30
400
445
150
300
260
Typ.
40
20
3
3
±200 nA
Max.
5.0
50
17 mΩ
3 mA
N/lb.
V/ns
V~
V~
μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
V
I
R
t
DE475
G = Gate
S = Source
Features
Advantages
Applications
D25
rr
-
-
-
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Substrate
Very High Current Handling
Fast Intrinsic Diode
Avalanche Rated
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
Capability
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
G
Excellent Thermal Transfer
Increased Temperature and Power
Cycling Capability
High Isolation Voltage
S
S
=
=
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
Isolated Tab
D = Drain
250V
100A
17mΩ Ω Ω Ω Ω
200ns
DS100267(05/10)
(2500V~)
D
D
D

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IXFZ140N25T Summary of contents

Page 1

... GSS DSS DS DSS 10V 60A, Note 1 DS(on © 2010 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXFZ140N25T TM Maximum Ratings 250 = 1MΩ 250 GS ±20 ±30 100 400 445 ≤ 150° -55 ... +150 150 -55 ... +150 2500 ...

Page 2

... D 22 255 , I = 70A 90 DSS D 62 0.15 Characteristic Values Min. Typ. JM 9.3 600 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFZ140N25T Max 0.28 °C/W °C/W Max. 140 A 560 A 1.3 V 200 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 ...

Page 3

... Value vs. D 120 100 T = 125º 25º 200 240 280 320 IXFZ140N25T Fig. 2. Extended Output Characteristics @ 10V Volts DS Fig Normalized to I DS(on) Junction Temperature V = 10V GS -50 - ...

Page 4

... J 25ºC - 40ºC 5.5 6.0 6.5 - Volts T = 25ºC J 0.9 1.0 1.1 1.2 1.3 1.4 1,000 C iss 100 C oss C rss Volts IXFZ140N25T Fig. 8. Transconductance 220 40ºC 200 J 180 160 25ºC 140 120 125ºC 100 100 I - Amperes D Fig. 10. Gate Charge ...

Page 5

... DE475 (IXFZ) Outline © 2010 IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXFZ140N25T 0 IXYS REF: IXFZ140N25T (9W)5-25-10-A 10 ...

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