MMIX1F180N25T IXYS, MMIX1F180N25T Datasheet - Page 5

• Manufacturer Part Number: MMIX1F180N25T
• Description: Trench HiperFETs
• Manufacturer: IXYS

Specifications of MMIX1F180N25T

• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 130
• Rds(on), Max, Tj=25°c, (?): 0.013
• Ciss, Typ, (pf): 28000
• Qg, Typ, (nc): 345
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 570
• Rthjc, Max, (k/w): 0.22
• Package Style: MMIX

© 2012 IXYS CORPORATION, All Rights Reserved
100,000
10,000
1,000
350
300
250
200
150
100
100
200
180
160
140
120
100
50
80
60
40
20
0
0
3.4
0
0
f
Fig. 9. Forward Voltage Drop of Intrinsic Diode
= 1 MHz
3.8
5
0.2
4.2
10
0.4
Fig. 7. Input Admittance
Fig. 11. Capacitance
4.6
15
T
V
V
J
0.6
SD
DS
= 125ºC
V
GS
- Volts
- Volts
T
J
5.0
20
= 125ºC
- Volts
- 40ºC
25ºC
0.8
5.4
25
T
C iss
C oss
C rss
J
= 25ºC
1
5.8
30
1.2
6.2
35
6.6
1.4
40
1,000
280
240
200
160
120
100
80
40
10
10
9
8
7
6
5
4
3
2
1
0
0
1
0
0
1
T
T
Single Pulse
R
J
C
V
I
I
DS(
D
G
= 150ºC
20
DS
= 25ºC
= 90A
= 10mA
on
= 125V
50
Fig. 12. Forward-Bias Safe Operating Area
)
Limit
40
100
Fig. 8. Transconductance
60
10
Fig. 10. Gate Charge
MMIX1F180N25T
Q
I
80
D
G
150
- Amperes
- NanoCoulombs
V
DS
100
- Volts
T
J
200
= - 40ºC
120
100
25ºC
125ºC
140
250
160
25µs
100µs
1ms
300
180
1000
350
200