IXTP60N28TM-A IXYS, IXTP60N28TM-A Datasheet

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IXTP60N28TM-A

Manufacturer Part Number
IXTP60N28TM-A
Description
Trench MOSFETs
Manufacturer
IXYS
Datasheet

Specifications of IXTP60N28TM-A

Vdss, Max, (v)
280
Id(cont), Tc=25°c, (a)
18
Rds(on), Max, Tj=25°c, (?)
0.058
Ciss, Typ, (pf)
5070
Qg, Typ, (nc)
84
Trr, Typ, (ns)
170
Trr, Max, (ns)
-
Pd, (w)
50
Rthjc, Max, (k/w)
2.5
Package Style
Overmolded TO-220
Trench
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
dV/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
DM
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
D
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
Continuous
T
T
Transient
T
T
I
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque
V
V
V
V
V
V
Test Conditions
Test Conditions
S
J
J
C
C
C
GS
DS
GS
DS
GS
GS
TM
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
≤ I
= 25°C
= 0V, I
= V
= ± 20V, V
= V
= 0V
= 10V, I
DM
, V
GS
DSS
, I
DD
D
D
D
= 1mA
≤ V
= 250μA
= 30A, Note 1
DS
DSS
= 0V
, T
J
GS
≤ 150°C
= 1MΩ
Preliminary Technical Information
T
J
= 125°C
JM
IXTP60N28TM-A
Characteristic Values
280
Min.
-55 ... +150
-55 ... +150
3.0
Maximum Ratings
1.13 / 10
± 20
± 30
280
280
140
150
300
260
Typ.
2.5
18
15
50
± 100 nA
Max.
Nm/lb.in.
250 μA
5.0
58 mΩ
5 μA
V/ns
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
g
V
V
OVERMOLDED TO-220 W/ FORMED
LEAD (IXTP...M-A)
V
I
R
Features
Applications
G = Gate
S = Source
D25
Plastic overmolded tab for electrical
isolation
Low R
- for minimum on-state conduction
Fast switching
PDP Screen Drivers, ER circuit
DS(on)
DSS
losses
G
DS(ON)
D
S
= 280V
= 18A
≤ ≤ ≤ ≤ ≤
58mΩ Ω Ω Ω Ω
D = Drain
DS100005(07/08)
Isolated Tab

Related parts for IXTP60N28TM-A

IXTP60N28TM-A Summary of contents

Page 1

... GSS DSS DS DSS 10V 30A, Note 1 DS(on © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTP60N28TM-A Maximum Ratings 280 = 1MΩ 280 GS ± 20 ± 140 JM ≤ 150° -55 ... +150 150 -55 ... +150 300 260 1. ...

Page 2

... Characteristic Values Min. Typ 100V 170 R GS 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTP60N28TM-A OVERMOLDED TO-220 W/ FORMED LEAD (IXTP...M-A) Max 2.5 °C/W Max 180 A 1 ...

Page 3

... Value 125º 25º 100 120 140 IXTP60N28TM-A Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature V = 10V ...

Page 4

... IXYS reserves the right to change limits, test conditions, and dimensions 125ºC J 25ºC - 40ºC 5.0 5.5 6.0 - Volts T = 25ºC J 0.8 0.9 1.0 1.1 1.2 1,000.0 C iss 100.0 10.0 C oss C rss IXTP60N28TM-A Fig. 8. Transconductance 120 40ºC 110 J 100 90 80 25º Amperes D Fig ...

Page 5

... V = 15V 140V IXTP60N28TM-A Fig. 14. Resistive Turn-on Rise Time vs. Drain Current R = 3.3Ω 15V 140V Amperes D Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature d(off 3.3Ω ...

Page 6

... IXYS reserves the right to change limits, test conditions, and dimensions. Fig. 19. Maximum Transient Thermal Impedance 0.01 0.1 Pulse Width - Seconds IXTP60N28TM IXYS REF: T_60N28T(6E)7-16-08 100 ...

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