IXTA50N28T IXYS, IXTA50N28T Datasheet

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IXTA50N28T

Manufacturer Part Number
IXTA50N28T
Description
Trench MOSFETs
Manufacturer
IXYS
Datasheet

Specifications of IXTA50N28T

Vdss, Max, (v)
280
Id(cont), Tc=25°c, (a)
50
Rds(on), Max, Tj=25°c, (?)
0.066
Ciss, Typ, (pf)
4070
Qg, Typ, (nc)
87
Trr, Typ, (ns)
180
Trr, Max, (ns)
-
Pd, (w)
340
Rthjc, Max, (k/w)
0.37
Package Style
TO-263

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTA50N28TTRL
Manufacturer:
IXYS
Quantity:
3 680
Trench Gate
Power MOSFETs
N-Channel Enhancement Mode
For PDP Drivers
Symbol
V
V
V
V
I
I
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2011 IXYS CORPORATION, All Rights Reserved
D25
DM
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
1.6mm (0.062) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220 &TO-3P)
TO-263
TO-220
TO-3P
V
V
V
V
V
Test Conditions
J
J
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 0V, I
= V
= ±20V, V
= V
= 10V, I
GS
DSS
, I
D
, V
D
D
= 250μA
= 250μA
= 0.5 • I
GS
DS
= 0V
= 0V
D25
GS
, Note 1
= 1MΩ
Preliminary Technical Information
T
J
= 125°C
JM
IXTQ50N28T
IXTA50N28T
IXTP50N28T
280
2.5
Characteristic Values
Min.
-55 ... +150
-55 ... +150
Maximum Ratings
1.13 / 10
280
280
±20
±30
125
340
150
300
260
2.5
3.0
5.5
50
Typ.
±200 nA
Nm/lb.in.
200 μA
Max.
4.5
66 mΩ
1 μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
V
V
g
g
g
V
I
R
TO-263 AA (IXTA)
TO-220AB (IXTP)
TO-3P (IXTQ)
G = Gate
S = Source
Features
Advantages
D25
Fast Intrinsic Diode
Low Q
Low R
Low Drain-to-Tab Capacitance
Low Package Inductance
Easy to Mount
Space Savings
DS(on)
DSS
G
D
G
DS(on)
G
S
D S
≤ ≤ ≤ ≤ ≤ 66mΩ Ω Ω Ω Ω
= 280V
= 50A
G
D
Tab = Drain
S
= Drain
D (Tab)
D (Tab)
D (Tab)
DS99378A(05/11)

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IXTA50N28T Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2011 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXTA50N28T IXTP50N28T IXTQ50N28T Maximum Ratings 280 = 1MΩ 280 GS ±20 ±30 50 125 JM 340 -55 ... +150 150 -55 ... +150 300 260 1. 2.5 3.0 5.5 Characteristic Values Min ...

Page 2

... L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 L4 0 0.13 0 .005 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123B1 5,034,796 5,187,117 5,486,715 6,306,728B1 IXTA50N28T IXTP50N28T IXTQ50N28T TO-220 Outline Max Pins Gate Source nC 0.37 °C/W °C/W °C/W Max 50 A 200 A 1.5 V TO-3P Outline ns μ ...

Page 3

... GS 7V 2.6 6V 2.2 1.8 1.4 5V 1.0 0.6 0 25A Value vs 100 110 120 130 IXTA50N28T IXTP50N28T Fig. 2. Extended Output Characteristics @ 10V 120 GS 7V 100 Volts DS Fig Normalized to I DS(on) Junction Temperature V = 10V ...

Page 4

... V - Volts DS IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 5.0 5.5 6.0 6.5 - Volts T = 25ºC J 0.8 0.9 1.0 1.1 1.2 - Volts 1000 C iss C oss C rss IXTA50N28T IXTP50N28T Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 140V ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Second IXTA50N28T IXTP50N28T IXTQ50N28T 0.1 IXYS REF: T_50N28T (5W) 5-25-11 1 ...

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