MMIX1F160N30T IXYS, MMIX1F160N30T Datasheet

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MMIX1F160N30T

Manufacturer Part Number
MMIX1F160N30T
Description
Trench HiperFETs
Manufacturer
IXYS
Datasheet

Specifications of MMIX1F160N30T

Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
102
Rds(on), Max, Tj=25°c, (?)
0.020
Ciss, Typ, (pf)
28000
Qg, Typ, (nc)
335
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
570
Rthjc, Max, (k/w)
0.22
Package Style
MMIX
GigaMOS
HiperFET
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
P
dv/dt
T
T
T
T
T
V
F
Weight
Symbol
(T
BV
V
I
I
R
© 2012 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
J
DSS
= 25°C, Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, 1 Minute
Mounting Force
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
TM
TM
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
≤ I
= 0V, I
= V
= ±20V, V
= V
= 10V, I
DM
Trench
GS
, V
DSS
, I
DD
D
, V
D
D
= 3mA
≤ V
= 8mA
= 60A, Note 1
GS
DS
= 0V
DSS
= 0V
TM
, T
J
GS
≤ 150°C
= 1MΩ
Note 2, T
Advance Technical Information
MMIX1F160N30T
J
JM
= 125°C
50..200 / 11..45
300
Min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
2500
102
300
300
±20
±30
440
570
150
300
260
Typ.
40
20
8
3
±200 nA
Max.
5.0
50
20 mΩ
3 mA
N/lb.
V/ns
V~
μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
V
I
R
t
G = Gate
S = Source
Features
Advantages
Applications
D25
rr
-
-
-
G
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Substrate
Very High Current Handling
Fast Intrinsic Diode
Avalanche Rated
DC-DC Converters and Off-Line UPS
Primary-Side Switch
High Speed Power Switching
Applications
Capability
Very Low R
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
Excellent Thermal Transfer
Increased Temperature and Power
Cycling Capability
High Isolation Voltage
S
Isolated Tab
S
=
=
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
G
DS(on)
D = Drain
300V
102A
20mΩ Ω Ω Ω Ω
200ns
DS100437(01/12)
(2500V~)
D
D

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MMIX1F160N30T Summary of contents

Page 1

... GSS DSS DS DSS 10V 60A, Note 1 DS(on © 2012 IXYS CORPORATION, All Rights Reserved Advance Technical Information MMIX1F160N30T Maximum Ratings 300 = 1MΩ 300 GS ±20 ±30 102 440 570 ≤ 150° -55 ... +150 150 -55 ... +150 300 ...

Page 2

... I = 80A 123 DSS D 56 0.05 30 Characteristic Values Min. Typ 1.06 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 MMIX1F160N30T Max Ω 0.22 °C/W °C/W °C/W Max. 160 A 640 A 1.3 V 200 ns A μC 6,404,065 B1 ...

Page 3

... Package Outline © 2012 IXYS CORPORATION, All Rights Reserved MMIX1F160N30T PIN Gate 5-12 = Source 13-24 = Drain ...

Page 4

... 80A Value vs. D 180 160 140 T = 125ºC J 120 100 T = 25ºC J 160 200 240 280 MMIX1F160N30T Fig. 2. Extended Output Characteristics @ 10V 5. Volts DS Fig Normalized to I DS(on) Junction Temperature 2.8 V ...

Page 5

... IXYS CORPORATION, All Rights Reserved = 125ºC J 25ºC - 40ºC 5.0 5.4 5.8 6.2 - Volts T = 25ºC J 0.8 1.0 1.2 1.4 - Volts 1,000 C iss C oss C rss Volts MMIX1F160N30T Fig. 8. Transconductance 300 T 250 200 150 100 100 I - Amperes D Fig. 10. Gate Charge 150V 80A ...

Page 6

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 0.1 Pulse Width - Seconds MMIX1F160N30T 1 10 100 IXYS REF: MMIX1F160N30T (9E)01-19-12 ...

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