FMD15-06KC5 IXYS, FMD15-06KC5 Datasheet
FMD15-06KC5
Manufacturer Part Number
FMD15-06KC5
Description
Manufacturer
IXYS
Datasheet
1.FMD15-06KC5.pdf
(3 pages)
Specifications of FMD15-06KC5
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
15
Rds(on), Max, Tj=25°c, (?)
0.165
Ciss, Typ, (pf)
2000
Qg, Typ, (nc)
40
Trr, Max, (ns)
-
Trr, Typ, (ns)
390
Pd, (w)
-
Rthjc, Max, (k/w)
1.10
Visol, Rms, (v)
2500
Package Style
ISOPLUSi4
CoolMOS
with
Buck and Boost Topologies
Electrically isolated back surface
2500 V electrical isolation
N-Channel Enhancement Mode
Low R
Ultra low gate charge
IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
MOSFET T
Symbol
V
V
I
I
E
E
dV/dt
Symbol
R
V
I
I
C
C
Q
Q
Q
t
t
t
t
E
E
E
R
R
DSS
GSS
D25
D90
d(on)
r
d(off)
f
GS(th)
GS
on
off
rec off
DSS
AS
AR
DSon
iss
oss
thJC
thCH
g
gs
gd
HiPerDyn ™ FRED
DSon
, high V
Conditions
T
T
T
single pulse
repetitive
MOSFET dV/dt ruggedness V
Conditions
V
V
V
V
V
f = 1 MHz
V
V
I
with heat transfer paste
D
VJ
C
C
GS
DS
DS
GS
GS
GS
GS
= 12 A; R
= 25°C
= 90°C
= 25°C
= 600 V; V
= 10 V; I
= V
= ± 20 V; V
= 0 V; V
= 0 to 10 V; V
= 10 V; V
™ 1)
GS
; I
DSS
D
DS
G
D
= 0.79 mA
DS
= 3.3 Ω
= 12 A
= 100 V
GS
MOSFET
Power MOSFET
DS
I
= 400 V
D
= 0 V
= 0 V
DS
= 7.9 A; T
= 400 V; I
T
T
C
VJ
VJ
= 25°C
D
DS
(T
= 25°C
= 125°C
= 12 A
= 0...480 V
Advanced Technical Information
VJ
= 25°C, unless otherwise specifi ed)
3
4
1
2
FMD
min.
2.5
Characteristic Values
T
2000
D
Maximum Ratings
0.35
150
100
typ.
tbd
tbd
tbd
10
40
13
12
50
3
9
5
5
3
5
4
2
max.
± 20
0.79
600
522
165
100
3.5
1.1
15
11
50
52
FDM
1
V/ns
K/W
K/W
mΩ
T
mJ
mJ
mJ
mJ
mJ
nC
nC
nC
µA
µA
nA
pF
pF
ns
ns
ns
ns
D
V
V
A
A
V
I
V
R
ISOPLUS i4
E72873
Features
• Silicon chip on Direct-Copper-Bond
• Fast CoolMOS
• Enhanced total power density
• HiPerDyn™ FRED
Applications
• Switched mode power supplies
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
Advantages
• Easy assembly:
• Space savings
• High power density
• High reliability
D25
substrate
- high power dissipation
- isolated mounting surface
- 2500 V electrical isolation
- low drain to tab capacitance (< 40 pF)
generation
- high blocking capability
- lowest resistance
- avalanche rated for unclamped
- low thermal resistance
- consisting of series connected diodes
- enhanced dynamic behaviour for
(SMPS)
no screws or isolation foils required
DSS
DS(on) max
inductive switching (UIS)
due to reduced chip thickness
high frequency operation
1)
1
CoolMOS
Infi neon Technologies AG.
5
™
FMD 15-06KC5
FDM 15-06KC5
=
=
= 0.165 Ω
™ 1)
™
is a trademark of
power MOSFET 4
600 V
15 A
isolated back
20090209c
surface
1 - 3
th
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FMD15-06KC5 Summary of contents
Page 1
... off E rec off R thJC R with heat transfer paste thCH IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved Advanced Technical Information FMD FDM Maximum Ratings 600 ± ...
Page 2
... pin - backside metal S A Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved Advanced Technical Information Characteristic Values (T = 25°C, unless otherwise specifi ed) VJ min. typ. max. ...
Page 3
... TM ISOPLUS i4 Outline IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved Advanced Technical Information FMD 15-06KC5 FDM 15-06KC5 20090209c ...