IXTK120P20T IXYS, IXTK120P20T Datasheet - Page 5

• Manufacturer Part Number: IXTK120P20T
• Description: TrenchP Channel Power MOSFETs
• Manufacturer: IXYS

Specifications of IXTK120P20T

• Vdss, Max, (v): -200
• Id(cont), Tc=25°c, (a): -120
• Rds(on), Max, Tj=25°c, (?): 0.030
• Ciss, Typ, (pf): 73000
• Qg, Typ, (nc): 740
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 1040
• Rthjc, Max, (k/w): 0.12
• Package Style: PLUS264

© 2011 IXYS CORPORATION, All Rights Reserved
180
160
140
120
100
80
75
70
65
60
55
50
45
40
700
600
500
400
300
200
100
80
60
0
-60
25
1
Fig. 15. Resistive Turn-on Switching Times vs.
Fig. 17. Resistive Turn-off Switching Times vs.
R
V
T
V
t
DS
G
J
35
r
DS
2
= 1Ω, V
= 125ºC, V
= -100V
= -100V
-70
I
Fig. 13. Resistive Turn-on Rise Time vs.
D
= -120A
45
GS
3
= -10V
GS
t
d(on)
= -10V
-80
55
T
4
Junction Temperature
Gate Resistance
J
T
- - - -
T
J
= 125ºC
Drain Current
J
= 25ºC
I
D
- Degrees Centigrade
65
R
- Amperes
5
G
-90
- Ohms
75
6
R
V
t
-100
f
85
G
DS
= 1Ω, V
7
= -100V
I
I
D
D
I
= -120A
= - 60A
95
D
GS
8
= - 60A
-110
t
= -10V
d(off)
105
9
- - - -
115
-120
10
250
240
230
220
210
200
190
180
170
350
300
250
200
150
100
50
0
125
180
160
140
120
100
500
450
400
350
300
250
200
150
100
70
65
60
55
50
45
40
80
60
50
0
25
-60
1
Fig. 16. Resistive Turn-off Switching Times vs.
Fig. 18. Resistive Turn-off Switching Times vs.
R
V
t
R
V
T
V
f
35
t
DS
G
DS
G
f
J
DS
= 1Ω, V
2
= 125ºC, V
= 1Ω, V
I
= -100V
D
= -100V
= -100V
= - 60A
-70
Fig. 14. Resistive Turn-on Rise Time vs.
45
GS
GS
3
t
= -10V
= -10V
d(off)
GS
t
d(off)
55
Junction Temperature
= -10V
T
4
- - - -
J
-80
- - - -
Gate Resistance
- Degrees Centigrade
65
R
Drain Current
5
I
I
G
I
D
D
D
- Ohms
75
- Amperes
= - 120A, - 60A
= - 120A
-90
6
85
T
J
7
T
= 125ºC
95
J
IXTK120P20T
IXTX120P20T
-100
= 25ºC
8
105
9
115
-110
125
10
1000
900
800
700
600
500
400
300
200
100
0
260
240
220
200
180
160
140
-120