IXTN120P20T IXYS, IXTN120P20T Datasheet

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IXTN120P20T

Manufacturer Part Number
IXTN120P20T
Description
TrenchP Channel Power MOSFETs
Manufacturer
IXYS
Datasheet

Specifications of IXTN120P20T

Vdss, Max, (v)
-200
Id(cont), Tc=25°c, (a)
-106
Rds(on), Max, Tj=25°c, (?)
0.030
Ciss, Typ, (pf)
73000
Qg, Typ, (nc)
740
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
830
Rthjc, Max, (k/w)
0.15
Package Style
SOT-227B
TrenchP
Power MOSFETs
P-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
© 2011 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
50/60 Hz, RMS, t = 1minute
I
Mounting Torque for Base Plate
Terminal Connection Torque
V
V
V
V
V
Test Conditions
S
ISOL
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
TM
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
≤ 1mA,
= 0V, I
= V
= ±15V, V
= V
= -10V, I
DM
, V
GS
DSS
, I
DD
D
, V
D
= - 250μA
D
≤ V
= - 250μA
GS
DS
= 60A, Note 1
= 0V
t = 1s
DSS
= 0V
, T
J
GS
≤ 150°C
= 1MΩ
T
Advance Technical Information
J
= 125°C
JM
IXTN120P20T
- 200
- 2.5
Min.
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.3/11.5
1.5/13
- 200
- 200
- 400
2500
3000
-106
-100
Typ.
±15
±25
830
150
10
30
3
±200 nA
- 300 μA
Nm/lb.in.
Nm/lb.in.
Max.
- 4.5
- 25 μA
30 mΩ
V/ns
V~
V~
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
V
I
R
t
miniBLOC
G = Gate
S = Source
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
Features
Advantages
Applications
D25
rr
Avalanche Rated
Low R
International Standard Package
Low
miniBLOC with Aluminum Nitride
Isolation
Extended FBSOA
Fast Intrinsic Recitifier
Easy to Mount
Space Savings
High Power Density
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Battery Charger Applications
DS(on)
DSS
Intrinsic Gate Resistance
E153432
DS(ON)
≤ ≤ ≤ ≤ ≤
=
=
≤ ≤ ≤ ≤ ≤
G
and Q
D = Drain
S
- 200V
- 106A
G
30mΩ Ω Ω Ω Ω
300ns
D
DS100402(10/11)
S

Related parts for IXTN120P20T

IXTN120P20T Summary of contents

Page 1

... GSS DSS DS DSS -10V 60A, Note 1 DS(on © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXTN120P20T Maximum Ratings - 200 = 1MΩ - 200 GS ±15 ±25 -106 - 400 JM -100 3 ≤ 150° 830 -55 ... +150 150 -55 ... +150 2500 3000 1 ...

Page 2

... 60A 220 DSS D 120 0.05 Characteristic Values Min. Typ. JM 3.3 25.6 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTN120P20T SOT-227B (IXTN) Outline Max (M4 screws (4x) supplied 0.15 °C/W °C/W Max. -120 A - 480 A -1.4 V 300 ns μC ...

Page 3

... 2 1.8 1 1.4 1.2 1.0 0 0.6 0 60A vs. D -120 -100 -80 -60 -40 -20 0 -160 -200 -240 -280 -50 IXTN120P20T Fig. 2. Extended Output Characteristics @ -10V - Volts DS Fig Normalized to I DS(on) Junction Temperature V = -10V -50 - Degrees Centigrade J Fig ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -5 -5.4 -5 25ºC J -0.9 -1.0 -1.1 -1.2 -1.3 -1.4 - 1000 C iss - 100 C oss - rss - 0.1 -25 -30 -35 -40 - Volts IXTN120P20T Fig. 8. Transconductance 300 T J 250 200 150 100 -20 -40 -60 -80 -100 -120 I - Amperes D Fig. 10. Gate Charge - -100V 60A D ...

Page 5

... GS 400 V = -100V 230 DS 350 220 300 250 210 200 200 150 190 100 180 50 170 0 -100 -110 -120 1 IXTN120P20T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current R = 1Ω -10V -100V 125º 25ºC J -70 -80 -90 -100 I - Amperes D Fig. 16. Resistive Turn-off Switching Times vs. ...

Page 6

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 19. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXTN120P20T 0.1 1 IXYS REF: T_120P20T(A9) 10-25-11 10 ...

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