IXTH68P20T IXYS, IXTH68P20T Datasheet

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IXTH68P20T

Manufacturer Part Number
IXTH68P20T
Description
TrenchP Channel Power MOSFETs
Manufacturer
IXYS
Datasheet

Specifications of IXTH68P20T

Vdss, Max, (v)
-200
Id(cont), Tc=25°c, (a)
-68
Rds(on), Max, Tj=25°c, (?)
0.055
Ciss, Typ, (pf)
33400
Qg, Typ, (nc)
380
Trr, Typ, (ns)
245
Trr, Max, (ns)
-
Pd, (w)
568
Rthjc, Max, (k/w)
0.22
Package Style
TO-247
TrenchP
Power MOSFETs
P-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2011 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TO-247
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-247)
TO-268
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
TM
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±15V, V
= V
= -10V, I
DM
GS
DSS
, V
, I
, V
DD
D
D
= - 250μA
D
≤ V
= - 250μA
GS
DS
= 0.5 • I
= 0V
DSS
= 0V
, T
J
D25
GS
≤ 150°C
, Note 1
= 1MΩ
Advance Technical Information
T
J
= 125°C
JM
IXTH68P20T
IXTT68P20T
- 200
- 2.0
Min.
Characteristic Values
- 55 ... +150
- 55 ... +150
Maximum Ratings
1.13 / 10
- 200
- 200
- 200
- 68
- 68
Typ.
±15
±25
568
150
300
260
2.5
10
6
4
- 200 μA
Max.
±100 nA
- 4.0
Nm/lb.in.
- 10 μA
55 mΩ
V/ns
°C
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
V
g
g
J
V
I
R
TO-268 (IXTT)
TO-247 (IXTH)
G = Gate
S = Source
Features
Advantages
Applications
D25
Avalanche Rated
Low R
International Standard Packages
Extended FBSOA
Fast Intrinsic Diode
Easy to Mount
Space Savings
High Power Density
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Battery Charger Applications
DS(on)
DSS
G
DS(ON)
D
≤ ≤ ≤ ≤ ≤
=
=
S
and Q
G
Tab = Drain
D
S
- 200V
- 68A
G
D
D
55mΩ Ω Ω Ω Ω
= Drain
(Tab)
(Tab)
DS100370(08/11)

Related parts for IXTH68P20T

IXTH68P20T Summary of contents

Page 1

... GSS DSS DS DSS -10V 0.5 • I DS(on © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXTT68P20T IXTH68P20T Maximum Ratings - 200 = 1MΩ - 200 GS ±15 ± 200 2.5 ≤ 150° 568 - 55 ... +150 150 - 55 ... +150 300 260 1 ...

Page 2

... L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXTT68P20T IXTH68P20T 2,4 - Drain ∅ Drain Inches Min. Max. 5.3 .185 .209 .087 .102 2.6 .059 .098 1.4 .040 .055 .065 .084 .113 .123 .8 .016 .031 .819 ...

Page 3

... V - Volts DS Fig Normalized to I DS(on) Junction Temperature V = -10V -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature -5 -50 - Degrees Centigrade J IXTT68P20T IXTH68P20T = 25ºC J -20 - 34A vs 68A 34A D 75 100 125 150 75 100 125 150 ...

Page 4

... NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area 100 R Limit DS(on 150º 25ºC C Single Pulse - Volts DS IXTT68P20T IXTH68P20T 40ºC J 25ºC 125ºC -70 -80 -90 -100 -110 250 300 350 400 25µs 100µs 1ms 10ms 100ms DC - 100 - 1000 ...

Page 5

... Gate Resistance d(off 125º -10V -100V 34A 68A Ohms G IXTT68P20T IXTH68P20T T = 25º 125ºC J -60 -65 -70 140 130 34A D 120 68A D 110 34A D 100 90 105 115 125 440 400 360 ...

Page 6

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 19. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXTT68P20T IXTH68P20T 0.1 1 IXYS REF: T_68P20T(A8)8-11-11 10 ...

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