IXTP32P20T IXYS, IXTP32P20T Datasheet

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IXTP32P20T

Manufacturer Part Number
IXTP32P20T
Description
TrenchP Channel Power MOSFETs
Manufacturer
IXYS
Datasheet

Specifications of IXTP32P20T

Vdss, Max, (v)
-200
Id(cont), Tc=25°c, (a)
-32
Rds(on), Max, Tj=25°c, (?)
0.13
Ciss, Typ, (pf)
14500
Qg, Typ, (nc)
185
Trr, Typ, (ns)
190
Trr, Max, (ns)
-
Pd, (w)
300
Rthjc, Max, (k/w)
0.42
Package Style
TO-220
Symbol
V
V
V
V
I
I
I
E
P
T
T
T
T
T
F
M
Weight
Symbol
(T
BV
V
I
I
R
TrenchP
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
TO-263 AA (IXTA)
© 2010 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
DSS
DGR
GSS
GSM
AS
D
J
JM
stg
L
SOLD
C
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
G
S
TO-247
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
1.6mm (0.062 in.) from Case for 10s
Plastic body for 10s
Mounting Force (TO-263)
Mounting Torque (TO-220, TO-247 & TO-3P)
TO-263
TO-220
TO-3P
Test Conditions
V
V
V
V
V
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
TM
D (Tab)
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
= 0V, I
= V
= ± 15V, V
= V
= -10V, I
GS
DSS
, I
D
, V
D
= - 250μA
D
= - 250μA
GS
= 0.5 • I
DS
= 0V
= 0V
TO-220AB (IXTP)
D25
GS
, Note 1
= 1MΩ
Preliminary Technical Information
T
J
G
= 125°C
D S
JM
IXTA32P20T
IXTP32P20T
IXTQ32P20T
IXTH32P20T
10..65 / 2.2..14.6
D (Tab)
-55 ... +150
-55 ... +150
- 200
- 2.0
Characteristic Values
Min.
Maximum Ratings
1.13 / 10
- 200
- 200
+ 15
+ 25
- 32
- 96
- 32
300
150
300
260
2.5
3.0
5.5
6.0
Typ.
1
Max.
±100 nA
-1.25 mA
- 4.0
Nm/lb.in.
- 25 μA
130 mΩ
N/lb.
°C
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
V
g
g
g
g
J
V
I
R
TO-3P (IXTQ)
TO-247 (IXTH)
G = Gate
S = Source
Features
Advantages
Applications
D25
Avalanche Rated
International Standard Packages
Extended FBSOA
Fast Intrinsic Diode
Low R
Easy to Mount
Space Savings
High Power Density
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Battery Charger Applications
DS(on)
DSS
G
D
G
S
DS(ON)
D
≤ ≤ ≤ ≤ ≤
=
=
S
and Q
D
Tab = Drain
- 200V
- 32A
D (Tab)
G
D (Tab)
130mΩ Ω Ω Ω Ω
= Drain
DS100288A(11/10)

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IXTP32P20T Summary of contents

Page 1

... GSS DSS DS DSS -10V 0.5 • I DS(on © 2010 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXTA32P20T IXTP32P20T IXTQ32P20T IXTH32P20T TO-220AB (IXTP (Tab) Maximum Ratings - 200 = 1MΩ - 200 300 -55 ... +150 150 -55 ...

Page 2

... I 66 DSS D D25 45 0.50 0.21 Characteristic Values Min. Typ. JM 190 1.7 -17.8 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA32P20T IXTQ32P20T IXTP32P20T IXTH32P20T Max 0.42 °C/W °C/W °C/W Max 128 A -1 μC A 6,404,065 B1 6,683,344 ...

Page 3

... TO-263 Outline TO-220 Outline Pins Gate 2 - Drain 3 - Source © 2010 IXYS CORPORATION, All Rights Reserved IXTA32P20T IXTQ32P20T IXTP32P20T IXTH32P20T TO-3P Outline Pins Gate 2,4 - Drain 3 - Source TO-247 Outline 1 = Gate 2 = Drain 3 = Source ...

Page 4

... D -35 -30 = 125ºC -25 -20 - 25ºC J -10 -60 -70 -80 -90 -100 -110 IXTA32P20T IXTQ32P20T IXTP32P20T IXTH32P20T Fig. 2. Extended Output Characteristics @ -10V -10 - Volts DS Fig Normalized to I DS(on) Junction Temperature V = -10V GS -50 - ...

Page 5

... IXYS CORPORATION, All Rights Reserved = 125ºC 25ºC - 40ºC -5.0 -5.5 -6.0 -6.5 - 25ºC J -0.8 -0.9 -1.0 -1.1 - 1000 C iss - 100 C oss - C rss - 0.1 -25 -30 -35 -40 IXTA32P20T IXTQ32P20T IXTP32P20T IXTH32P20T Fig. 8. Transconductance -10 -15 -20 -25 - Amperes D Fig. 10. Gate Charge V = -100V - -16A -1mA G ...

Page 6

... -100V DS 100 125º -45 -50 -55 -60 -65 IXTA32P20T IXTQ32P20T IXTP32P20T IXTH32P20T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current R = 1Ω -10V -100V DS 25ºC < T < 125ºC J -15 -20 -25 -30 -35 -40 - Amperes D Fig. 16. Resistive Turn-off Switching Times vs. ...

Page 7

... IXYS CORPORATION, All Rights Reserved Fig. 19. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXTA32P20T IXTQ32P20T IXTP32P20T IXTH32P20T 0.1 1 IXYS REF: T_32P20T(A6)10-14-10 10 ...

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