IXYT80N90C3 IXYS, IXYT80N90C3 Datasheet

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IXYT80N90C3

Manufacturer Part Number
IXYT80N90C3
Description
XPT 900V
Manufacturer
IXYS
Datasheet

Specifications of IXYT80N90C3

Vces, (v)
900
Ic25, Tc = 25°c, Igbt, (a)
165
Ic90, Tc = 90°c, Igbt, (a)
-
Ic110, Tc = 110°c, Igbt, (a)
80
Vce(sat), Typ, Tj = 25°c, Igbt (v)
2.7
Tfi, Typ, Tj = 25°c, Igbt, (ns)
86
Eoff, Typ, Tj = 125°c, Igbt (mj)
-
Eoff, Typ, Tj = 150°c, Igbt (mj)
2.5
Rthjc, Max, Igbt (c/w)
0.18
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
-
Rthjc, Max, Diode (k/w)
-
Package Style
TO-268
900V XPT
GenX3
High-Speed IGBT
for 20-50 kHz Switching
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
V
© 2012 IXYS CORPORATION, All Rights Reserved
C25
LRMS
C110
CM
CES
GES
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
TM
Clamped Inductive Load
TO-268
Test Conditions
T
T
Continuous
Transient
T
Terminal Current Limit
T
T
V
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-247)
TO-247
Test Conditions
I
V
V
I
I
C
C
C
J
J
C
C
C
C
GE
CE
CE
= 25°C ( Chip Capability)
= 25°C to 175°C
= 25°C to 175°C, R
= 110°C
= 25°C, 1ms
= 25°C
= 15V, T
TM
= 250μA, V
= V
= 0V, V
= 80A, V
= 250μA, V
CES
IGBTs
, V
GE
VJ
GE
GE
= ±20V
= 150°C, R
= 0V
CE
= 15V, Note 1
GE
= V
= 0V
GE
GE
= 1MΩ
G
= 2Ω
Advance Technical Information
T
T
J
J
= 150°C
= 150°C
IXYH80N90C3
IXYT80N90C3
Min.
950
Characteristic Values
3.5
@V
-55 ... +175
-55 ... +175
Maximum Ratings
I
CE
CM
1.13/10
Typ.
2.9
= 160
2.3
±20
±30
360
V
830
175
300
260
900
900
165
160
4
6
80
CES
±100
Max.
750
Nm/lb.in.
2.7
5.5
25
μA
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
A
A
V
V
V
g
g
V
I
V
t
TO-268 (IXYT)
TO-247 (IXYH)
G = Gate
E = Emiiter
Features
Advantages
Applications
C110
fi(typ)
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of
International Standard Packages
High Power Density
Low Gate Drive Requirement
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Vce(sat)
CES
CE(sat)
G
C
= 900V
= 80A
= 86ns
E
≤ ≤ ≤ ≤ ≤ 2.7V
G
Tab = Collector
C
E
C
C
= Collector
(Tab)
(Tab)
DS100446(02/12)

Related parts for IXYT80N90C3

IXYT80N90C3 Summary of contents

Page 1

... CES CE CES GE = ±20V 0V, V GES 80A 15V, Note 1 CE(sat © 2012 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXYT80N90C3 IXYH80N90C3 Maximum Ratings 900 = 1MΩ 900 GE ±20 ±30 165 160 80 360 = 2Ω 160 G CM ≤ ...

Page 2

... T CE 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXYT80N90C3 IXYH80N90C3 TO-268 Outline Max Terminals Gate Emitter 2 0.18 °C/W °C/W TO-247 Outline ...

Page 3

... Junction Temperature V = 15V -50 - Degrees Centigrade J Fig. 6. Input Admittance T = 150º Volts GE IXYT80N90C3 IXYH80N90C3 = 25ºC J 11V 10V CE(sat) = 160A = 80A C = 40A C 100 125 150 175 25ºC - 40º ...

Page 4

... Q - NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 150ºC J Ω < 10V / ns 0 100 200 300 400 500 600 V - Volts CE Fig. 12. Maximum Transient Thermal Impedance 1 0.0001 0.001 0.01 Pulse Width - Seconds IXYT80N90C3 IXYH80N90C3 100 120 140 700 800 900 0 ...

Page 5

... R - Ohms G Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature d(on) Ω 15V 450V 100 T - Degrees Centigrade J IXYT80N90C3 IXYH80N90C3 100 360 320 280 240 200 160 120 180 160 I = 40A 140 ...

Page 6

... I = 40A 100 125 150 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current d(on) Ω 15V 25ºC, 150º 450V Amperes C IXYT80N90C3 IXYH80N90C3 100 IXYS REF: IXY_80N90C3(7D) 02-16-12 ...

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