IXA17IF1200HJ IXYS, IXA17IF1200HJ Datasheet - Page 5

• Manufacturer Part Number: IXA17IF1200HJ
• Description: XPT 1200V
• Manufacturer: IXYS

Specifications of IXA17IF1200HJ

• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 28
• Ic90, Tc = 90°c, Igbt, (a): 18
• Ic110, Tc = 110°c, Igbt, (a): -
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 1.8
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 100
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 1.7
• Rthjc, Max, Igbt (c/w): 1.26
• If, Tc = 90°c, Diode (a): 19
• If, Tc = 110°c, Diode (a): -
• Rthjc, Max, Diode (k/w): 1.50
• Package Style: ISOPLUS247

IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
[A]
[A]
[mJ]
I
I
C
C
E
30
25
20
15
10
30
25
20
15
10
5
0
5
0
4
3
2
1
0
0
5
Fig. 3 Typ. tranfer characteristics
0
Fig. 5 Typ. switching energy vs. collector current
Fig. 1 Typ. output characteristics
V
R
V
V
T
GE
VJ
CE
GE
G
T
6
= 15 V
VJ
=
5
= 125°C
= 600 V
= ±15 V
= 125°C
56
7
10
T
1
VJ
= 25°C
8
V
T
15
V
VJ
CE
I
GE
C
= 25°C
9
[V]
[A]
[V]
20
2
10 11 12 13
T
VJ
= 125°C
25
30
3
E
E
off
on
35
Data according to IEC 60747and per diode unless otherwise specified
[mJ]
V
[V]
E
[A]
GE
I
C
2.8
2.4
2.0
1.6
1.2
30
25
20
15
10
20
15
10
Fig. 6 Typ. switching energy vs. gate resistance
5
0
5
0
40
0
0
Fig. 2 Typ. output characteristics
Fig. 4 Typ. turn-on gate charge
T
VJ
I
V
V
T
I
V
C
E
E
C
VJ
CE
GE
CE
=
= 125°C
off
on
60
10
= 125°C
= 600 V
= ±15 V
= 15 A
= 600 V
1
15 A
V
GE
80
= 15 V
20
IXA17IF1200HJ
17 V
19 V
2
R
Q
100
G
V
30
G
CE
[ ]
[nC]
[V]
3
120
40
13 V
140
4
50
20100623a
11 V
9 V
160
60
5