IXYH30N120C3 IXYS, IXYH30N120C3 Datasheet

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IXYH30N120C3

Manufacturer Part Number
IXYH30N120C3
Description
XPT 1200V
Manufacturer
IXYS
Datasheet

Specifications of IXYH30N120C3

Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
66
Ic90, Tc = 90°c, Igbt, (a)
-
Ic110, Tc = 110°c, Igbt, (a)
30
Vce(sat), Typ, Tj = 25°c, Igbt (v)
4.0
Tfi, Typ, Tj = 25°c, Igbt, (ns)
86
Eoff, Typ, Tj = 125°c, Igbt (mj)
0.90
Eoff, Typ, Tj = 150°c, Igbt (mj)
-
Rthjc, Max, Igbt (c/w)
0.30
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
-
Rthjc, Max, Diode (k/w)
-
Package Style
TO-247
1200V XPT
GenX3
High-Speed IGBT
for 20-50 kHz Switching
Symbol
V
V
V
V
I
I
I
I
E
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
V
© 2012 IXYS CORPORATION, All Rights Reserved
C25
C110
CM
A
CES
GES
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
AS
C
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
TM
Clamped Inductive Load
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
V
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
TO-220
Test Conditions
I
V
V
I
TO-247
I
C
C
C
J
J
C
C
C
C
C
C
GE
CE
CE
IGBTs
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 110°C
= 25°C, 1ms
= 25°C
= 25°C
= 25°C
= 15V, T
= 250μA, V
= V
= 0V, V
= 30A, V
= 250μA, V
TM
CES
, V
GE
VJ
GE
GE
= ±20V
= 125°C, R
= 0V
CE
= 15V, Note 1
GE
= V
= 0V
GE
GE
= 1MΩ
G
= 10Ω
T
T
J
J
= 125°C
= 125°C
IXYH30N120C3
IXYP30N120C3
1200
Min.
3.0
Characteristic Values
@V
-55 ... +150
-55 ... +150
Maximum Ratings
CE
I
1.13/10
CM
Typ.
3.8
1200
1200
= 60
400
±20
±30
130
V
416
150
300
260
30
66
20
CES
3
6
±100
Max.
150
Nm/lb.in.
5.0
4.0
15
mJ
μA
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
A
A
V
V
V
g
g
V
I
V
t
TO-220 (IXYP)
TO-247 (IXYH)
G = Gate
E = Emitter
Features
Advantages
Applications
C110
fi(typ)
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of
Avalanche Rated
High Current Handling Capability
International Standard Packages
High Power Density
Low Gate Drive Requirement
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Vce(sat)
CES
CE(sat)
G
C
G
E
C E
= 1200V
= 30A
= 86ns
≤ ≤ ≤ ≤ ≤ 4.0V
C
Tab = Collector
Tab
Tab
= Collector
DS100385B(02/12)

Related parts for IXYH30N120C3

IXYH30N120C3 Summary of contents

Page 1

... CES CE CES GE = ±20V 0V, V GES 30A 15V, Note 1 CE(sat © 2012 IXYS CORPORATION, All Rights Reserved IXYP30N120C3 IXYH30N120C3 Maximum Ratings 1200 = 1MΩ 1200 GE ±20 ± 130 20 400 = 10Ω ≤ CES 416 -55 ...

Page 2

... T CE 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXYP30N120C3 IXYH30N120C3 Max. TO-220 Outline Pins Gate Emitter 0.3 °C/W °C/W TO-247 Outline °C/W ...

Page 3

... T = 25º IXYP30N120C3 IXYH30N120C3 Fig. 2. Extended Output Characteristics @ Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V 60A C -50 - Degrees Centigrade J Fig. 6. Input Admittance 80 70 ...

Page 4

... C ies oes res 200 Fig. 11. Maximum Transient Thermal Impedance 0.001 Pulse Width - Second IXYP30N120C3 IXYH30N120C3 Fig. 8. Gate Charge V = 600V 30A 10mA NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 125ºC J Ω ...

Page 5

... V = 15V 600V 160 CE 160 150 140 140 120 130 T = 125ºC J 100 120 80 110 60 100 IXYP30N120C3 IXYH30N120C3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 600V 125º ...

Page 6

... I = 15A 23.5 23.0 22 30A C 22.0 21.5 I =15A C 21.0 100 125 IXYP30N120C3 IXYH30N120C3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on) Ω 15V 600V 125º Amperes ...

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