IXYH50N120C3 IXYS, IXYH50N120C3 Datasheet - Page 3

• Manufacturer Part Number: IXYH50N120C3
• Description: XPT 1200V
• Manufacturer: IXYS

Specifications of IXYH50N120C3

• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 105
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 50
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 3.0
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 57
• Eoff, Typ, Tj = 125°c, Igbt (mj): 1.47
• Eoff, Typ, Tj = 150°c, Igbt (mj): -
• Rthjc, Max, Igbt (c/w): 0.20
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): -
• Rthjc, Max, Diode (k/w): -
• Package Style: TO-247

© 2011 IXYS CORPORATION, All Rights Reserved
100
100
7.5
6.5
5.5
4.5
3.5
2.5
1.5
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
0
0
5
0.5
0.5
6
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
1
Fig. 5. Collector-to-Emitter Voltage vs.
7
1
1.5
8
Gate-to-Emitter Voltage
1.5
2
25A
9
2.5
V
V
V
50A
2
CE
CE
I
GE
C
- Volts
= 100A
10
- Volts
3
- Volts
V
V
GE
GE
2.5
= 15V
3.5
= 15V
13V
11V
10V
9V
11
13V
11V
10V
9V
3
4
12
J
4.5
J
= 125ºC
= 25ºC
3.5
13
T
5
J
8V
7V
6V
5V
= 25ºC
8V
7V
6V
5V
4
14
5.5
4.5
15
6
100
300
250
200
150
100
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
90
80
70
60
50
40
30
20
10
50
0
0
-50
2.5
0
Fig. 2. Extended Output Characteristics @ T
V
GE
3
-25
= 15V
V
GE
5
3.5
= 15V
Fig. 4. Dependence of V
0
4
Fig. 6. Input Admittance
Junction Temperature
13V
10
T
4.5
12V
J
25
- Degrees Centigrade
T
J
11V
= 125ºC
V
- 40ºC
IXYH50N120C3
V
5
GE
CE
25ºC
50
15
- Volts
- Volts
5.5
I
C
10V
= 100A
I
C
75
6
= 50A
CE(sat)
I
20
C
9V
= 25A
6.5
100
on
8V
7
J
25
= 25ºC
125
7.5
7V
6V
5V
150
8
30