IXGI48N60C3 IXYS, IXGI48N60C3 Datasheet

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IXGI48N60C3

Manufacturer Part Number
IXGI48N60C3
Description
High-Frequency Range (>40khz)
Manufacturer
IXYS
Datasheet

Specifications of IXGI48N60C3

Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
48
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.5
Tfi, Typ, Tj=25°c, Igbt, (ns)
-
Eoff, Typ, Tj=125°c, Igbt, (mj)
38
Rthjc, Max, Igbt, (°c/w)
0.57
If, Tj=110°c, Diode, (a)
0.42
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-263 LEAD
GenX3
High-Speed PT IGBTs for
40-100kHz Switching
Symbol
V
V
V
V
I
I
I
I
E
SSOA
(RBSOA)
P
T
T
T
T
T
F
M
Weight
Symbol Test Conditions
(T
BV
V
I
I
V
© 2011 IXYS CORPORATION, All Rights Reserved
C25
C110
CM
A
CES
GES
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
AS
C
GE(th)
CE(sat)
d
J
CES
= 25°C Unless Otherwise Specified)
TM
Test Conditions
I
I
V
V
I
T
T
Continuous
Transient
T
T
T
T
T
V
Clamped Inductive Load
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 Seconds
Mounting Force
Mounting Torque (TO-247&TO-220)
TO-263
TO-263 Lead
TO-247
TO-220
C
C
C
C
J
C
C
C
C
C
C
CE
CE
GE
= 25°C to 150°C, R
= 25°C to 150°C
= 25°C
= 110°C
= 25°C
= 25°C
= 25°C
= 25°C, 1ms
= 250μA, V
= 250μA, V
= 30A, V
= 0V, V
= V
600V IGBTs
= 15V, T
CES
, V
GE
GE
VJ
GE
= ± 20V
= 15V, Note 1
GE
CE
= 125°C, R
= 0V
= V
= 0V
(TO-263 Lead)
GE
GE
= 1MΩ
G
= 3Ω
T
T
J
J
= 125°C
= 125°C
10.65 / 2.5..14.6
IXGA48N60C3
IXGH48N60C3
IXGI48N60C3
IXGP48N60C3
-55 ... +150
-55 ... +150
Characteristic Values
600
V
Min.
I
3.0
CM
CE
1.13/10
Maximum Ratings
= 100
≤ V
± 20
± 30
600
300
600
250
300
150
300
260
2.5
2.8
3.0
6.0
75
30
48
CES
Typ.
1.8
2.3
±100 nA
Nm/lb.in.
Max.
250 μA
2.5
5.5
25 μA
N/lb.
mJ
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
V
V
A
A
A
A
A
g
g
g
g
V
I
V
t
Features
Advantages
Applications
C110
fi(typ)
Optimized for Low Switching Losses
Square RBSOA
Avalanche Rated
Fast Switching
International Standard Packages
High Power Density
Low Gate Drive Requirement
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
CES
CE(sat)
≤ ≤ ≤ ≤ ≤ 2.5V
= 600V
= 48A
= 38ns
DS99953B(06/11)

Related parts for IXGI48N60C3

IXGI48N60C3 Summary of contents

Page 1

... CES CE CES 0V ± 20V GES 30A 15V, Note 1 CE(sat © 2011 IXYS CORPORATION, All Rights Reserved IXGI48N60C3 IXGA48N60C3 IXGP48N60C3 IXGH48N60C3 Maximum Ratings 600 = 1MΩ 600 ± 20 ± 250 30 300 = 3Ω 100 G CM ≤ ...

Page 2

... T CE 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGI48N60C3 IXGA48N60C3 IXGP48N60C3 IXGH48N60C3 TO-263 Lead (IXGI) Max TO-263 AA (IXGA TO-220AB (IXGP) 100 ...

Page 3

... Leaded 263 Outline Pins Gate 2,4 - Collector 3 - Emitter TO-263 Outline Pins Gate 2,4 - Collector 3 - Emitter © 2011 IXYS CORPORATION, All Rights Reserved IXGI48N60C3 IXGA48N60C3 IXGP48N60C3 IXGH48N60C3 TO-247Outline ∅ P Pins Gate 2 - Collector 3 - Emitter e Dim. Millimeter Inches Min. Max. Min. A 4.7 5.3 .185 A 2.2 2.54 .087 1 A 2.2 2.6 .059 2 b 1.0 1.4 .040 b 1 ...

Page 4

... T = 25º IXGI48N60C3 IXGA48N60C3 IXGP48N60C3 IXGH48N60C3 Fig. 2. Extended Output Characteristics @ 15V GE 13V 11V Volts CE Fig. 4. Dependence of V Junction Temperature I = 60A 30A 15A C 25 ...

Page 5

... C ies oes res 200 Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXGI48N60C3 IXGA48N60C3 IXGP48N60C3 IXGH48N60C3 Fig. 8. Gate Charge V = 300V 30A NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 125º ...

Page 6

... IXGI48N60C3 IXGA48N60C3 IXGP48N60C3 IXGH48N60C3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current - - - - E E off on Ω 15V 400V 125ºC, 25º ...

Page 7

... I = 60A 30A 15A 105 115 125 IXGI48N60C3 IXGA48N60C3 IXGP48N60C3 IXGH48N60C3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on 3Ω 15V 400V CE 25ºC < T < 125º ...

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