IXGT72N60B3 IXYS, IXGT72N60B3 Datasheet

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IXGT72N60B3

Manufacturer Part Number
IXGT72N60B3
Description
Mid-Frequency Range (15khz-40khz)
Manufacturer
IXYS
Datasheet

Specifications of IXGT72N60B3

Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
72
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.80
Tfi, Typ, Tj=25°c, Igbt, (ns)
90
Eoff, Typ, Tj=125°c, Igbt, (mj)
2.20
Rthjc, Max, Igbt, (°c/w)
0.23
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-268
GenX3
IGBTs
Medium Speed low Vsat PT
IGBTs 5-40 kHz Switching
Symbol
V
V
V
V
I
I
I
I
E
SSOA
(RBSOA)
P
T
T
T
M
T
T
Weight
Symbol
(T
BV
V
I
I
V
© 2009 IXYS CORPORATION, All Rights Reserved
C25
C110
CM
A
CES
GES
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
AS
C
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
TM
T
T
Continuous
Transient
T
T
T
T
T
V
Clamped Inductive Load
T
Mounting Torque (TO-247)
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
TO-247
TO-268
Test Conditions
Test Conditions
I
I
V
V
I
C
C
C
J
J
C
C
C
C
C
C
GE
CE
CE
B3-Class
= 250μA, V
= 250μA, V
= 60A, V
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C (Limited by Leads)
= 110°C
= 25°C, 1ms
= 25°C
= 25°C
= 15V, T
= 25°C
= V
= 0V, V
CES,
V
GE
GE
VJ
GE
= ±20V
= 125°C, R
GE
CE
= 15V, Note 1
= 0V
= 0V
= V
GE
GE
= 1MΩ
G
= 3Ω
T
T
J
J
= 125°C
= 125°C
IXGH72N60B3
IXGT72N60B3
600
Min.
3.0
@ V
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
I
1.13 / 10
CM
CE
≤ 600
1.48
= 240
1.51
Typ.
±20
±30
400
200
540
150
300
260
600
600
75
72
20
6
5
±100
1.80
Max.
750
5.0
Nm/lb.in.
75
μA
mJ
μA
°C
nA
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
A
A
V
V
V
g
g
TO-247 AD (IXGH)
TO-268 (IXGT)
G = Gate
E = Emitter
V
I
V
t
Features
Advantages
Applications
C110
fi(typ)
Optimized for Low Conduction and
Switching Losses
Square RBSOA
Avalanche Rated
International Standard Packages
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
CES
CE(sat)
G
C
G
E
E
C
TAB = Collector
≤ ≤ ≤ ≤ ≤
= 600V
= 72A
= 90ns
£
= Collector
1.80V
(TAB)
(TAB)
DS99847A(02/09)

Related parts for IXGT72N60B3

IXGT72N60B3 Summary of contents

Page 1

... CES CE CES ±20V 0V, V GES 60A 15V, Note 1 CE(sat © 2009 IXYS CORPORATION, All Rights Reserved IXGH72N60B3 IXGT72N60B3 Maximum Ratings 600 = 1MΩ 600 GE ±20 ± 400 20 200 = 3Ω 240 G CM ≤ 600 @ V CE 540 -55 ... +150 150 -55 ...

Page 2

... CES 1.38 150 90 1. 2.70 228 142 2.20 0.25 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGH72N60B3 IXGT72N60B3 TO-247 AD Outline Max Dim. Millimeter ns Min. Max 2.2 2.54 1 330 1.0 160 ns b 1.65 2 ...

Page 3

... Fig. 4. Dependence of V Junction Temperature 1 15V GE 1.2 1.1 1.0 0.9 0.8 0.7 -50 - Degrees Centigrade J Fig. 6. Input Admittance 180 160 140 120 100 125º 25ºC - 40º 4.0 4.5 5.0 5.5 6 Volts GE IXGH72N60B3 IXGT72N60B3 CE(sat 120A 60A 30A C 75 100 125 150 6.5 7.0 7.5 8.0 ...

Page 4

... C oes 120 80 C res 40 0 100 Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXGH72N60B3 IXGT72N60B3 Fig. 8. Gate Charge V = 300V 60A 10mA 100 120 140 160 180 200 220 240 Q - NanoCoulombs G Fig ...

Page 5

... Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature I = 25A, 50A, 100A 480V Degrees Centigrade J IXGH72N60B3 IXGT72N60B3 25º 100 1300 1150 1000 850 700 550 400 d(off) = 15V ...

Page 6

... Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on 3Ω 15V 480V 25ºC, 125º Amperes C IXGH72N60B3 IXGT72N60B3 25ºC < T < 125º 100 IXYS REF: G_72N60B3(76)02-10-09-D ...

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