IXGT39N60B IXYS, IXGT39N60B Datasheet
IXGT39N60B
Specifications of IXGT39N60B
Related parts for IXGT39N60B
IXGT39N60B Summary of contents
Page 1
... 125 GES CE(sat © 2003 IXYS All rights reserved IXGH39N60B IXGH39N60BD1 I IXGT39N60B IXGT39N60BD1 t Maximum Ratings 600 = 1 M 600 152 = 0.8 V CES 200 -55 ... +150 150 -55 ... +150 300 TO-247 1 ...
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... -di/dt = 100 thJC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: IXGH39N60B IXGH39N60BD1 IXGT39N60BD1 Characteristic Values ( unless otherwise specified) J min. typ. max ...
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... Volts CE Fig & V CES (GE)TH Temperature 1.2 V 1.1 GE(TH) 1 0.9 0.8 0.7 -50 - Degrees Centigrade J © 2003 IXYS All rights reserved IXGH39N60B IXGH39N60BD1 IXGT39N60BD1 2 vs. Junction BV CES 75 100 125 150 IXGT39N60B Fig. 2. Extended Output Characteristics @ 25 Deg. C 160 V =15V GE 140 13V ...
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... nanocoulombs G IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: IXGH39N60B IXGH39N60BD1 IXGT39N60BD1 80 100 120 on R OFF 78A 39A 19. ...
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... T VJ Fig. 15 Dynamic parameters versus K/W 0.1 Z thJC 0.01 0.001 0.00001 0.0001 0.001 Fig. 18 Transient thermal resistance junction to case © 2003 IXYS All rights reserved IXGH39N60B IXGH39N60BD1 IXGT39N60BD1 1000 T = 100° 300V nC R 800 I = 60A 30A 15A F ...