IXGR72N60A3

Manufacturer Part NumberIXGR72N60A3
DescriptionLow-Frequency Range (DC-15khz), A-IGBT Low VCE(sat)
ManufacturerIXYS
IXGR72N60A3 datasheet
 


Specifications of IXGR72N60A3

Vces, (v)600Ic25, Tc=25°c, Igbt, (a)-
Ic90, Tc=90°c, Igbt, (a)-Ic110, Tc=110°c, Igbt, (a)52
Vce(sat), Max, Tj=25°c, Igbt, (v)1.35Tfi, Typ, Tj=25°c, Igbt, (ns)250
Eoff, Typ, Tj=125°c, Igbt, (mj)6.5Rthjc, Max, Igbt, (°c/w)0.62
If, Tj=110°c, Diode, (a)-Rthjc, Max, Diode, (ºc/w)-
Package StyleISOPLUS247  
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TM
GenX3
600V IGBT
Ultra-low Vsat PT IGBTs for
up to 5kHz switching
Symbol
Test Conditions
V
T
= 25°C to 150°C
CES
J
V
T
= 25°C to 150°C, R
CGR
J
GE
V
Continuous
GES
V
Transient
GEM
I
T
= 110°C
C110
C
I
T
= 25°C, 1ms
CM
C
SSOA
V
= 15V, T
= 125°C, R
GE
VJ
(RBSOA)
Clamped inductive load @ V
P
T
= 25°C
C
C
T
J
T
JM
T
stg
F
Mounting Force
C
T
1.6mm (0.063 in.) from case for 10s
L
T
Plastic body for 10s
SOLD
V
50/60 Hz, RMS
ISOL
≤ 1mA
I
ISOL
Weight
Symbol
Test Conditions
(T
= 25°C, unless otherwise specified)
J
BV
I
= 250μA, V
= 0V
CES
C
GE
V
I
= 250μA, V
= V
GE(th)
C
CE
GE
I
V
= V
CES
CE
CES
V
= 0V
GE
I
V
= 0V, V
= ± 20V
GES
CE
GE
V
I
= 60A, V
= 15V, Note
CE(sat)
C
GE
© 2008 IXYS CORPORATION, All rights reserved
IXGR72N60A3
Maximum Ratings
600
= 1MΩ
600
± 20
± 30
52
400
= 3Ω
I
= 150
G
CM
≤ ≤ ≤ ≤ ≤ 600V
CE
200
-55 ... +150
150
-55 ... +150
20..120/4.5..27
300
260
t = 1min 2500
t = 1s
3000
5
Characteristic Values
Min.
Typ.
600
3.0
T
= 125°C
J
V
= 600V
CES
I
= 52A
C110
≤ ≤ ≤ ≤ ≤ 1.35V
V
CE(sat)
t
= 250ns
fi(typ)
ISOPLUS247
(IXGR)
TM
V
E153432
V
V
V
A
G
A
C
E
A
W
G = Gate
C = Collector
°C
°C
°C
Features
N/lb.
Silocon chip on Direct-Copper Bond
°C
(DCB) substrate
°C
Isolated mounting surface
2500V electrical isolation
V~
V~
Advantages
g
High power density
Low gate drive requirement
Applications
Power Inverters
UPS
Motor Drives
Max.
SMPS
PFC Circuits
V
Battery Chargers
5.0
V
Welding Machines
μA
75
Lamp Ballasts
750
μA
Inrush Current Protection Circuits
± 100
nA
1.35
V
Isolated Tab
E
= Emitter
DS99963A(07/08)

IXGR72N60A3 Summary of contents

  • Page 1

    ... 0V ± 20V GES 60A 15V, Note CE(sat © 2008 IXYS CORPORATION, All rights reserved IXGR72N60A3 Maximum Ratings 600 = 1MΩ 600 ± 20 ± 400 = 3Ω 150 G CM ≤ ≤ ≤ ≤ ≤ 600V CE 200 -55 ... +150 150 -55 ...

  • Page 2

    ... CE CES 1.4 320 250 3 2.6 510 375 6.5 0.15 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGR72N60A3 ISOPLUS247 (IXGR) Outline Max 0.62 °C/W °C/W 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 ...

  • Page 3

    ... GE 13V 1.3 11V 9V 1.2 1.1 1.0 7V 0.9 0.8 5V 0.7 1.0 1.2 1.4 1.6 1.8 200 180 T = 25ºC J 160 140 120 100 IXGR72N60A3 Fig. 2. Extended Output Characteristics @ 25º 15V GE 13V 11V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V GE -50 - Degrees Centigrade J Fig. 6. Input Admittance T = 125º ...

  • Page 4

    ... IXYS reserves the right to change limits, test conditions, and dimensions 40ºC J 25ºC 125ºC 120 140 160 180 200 C ies C oes C res Fig. 11. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXGR72N60A3 Fig. 8. Gate Charge 300V 60A ...

  • Page 5

    ... IXGR72N60A3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off 3Ω 15V 480V 125º ...

  • Page 6

    ... 15V 480V 25A 105 115 125 IXGR72N60A3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on 3Ω 15V 480V Amperes 25º 125º ...