IXGR72N60A3 IXYS, IXGR72N60A3 Datasheet

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IXGR72N60A3

Manufacturer Part Number
IXGR72N60A3
Description
Low-Frequency Range (DC-15khz), A-IGBT Low VCE(sat)
Manufacturer
IXYS
Datasheet

Specifications of IXGR72N60A3

Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
-
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
52
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.35
Tfi, Typ, Tj=25°c, Igbt, (ns)
250
Eoff, Typ, Tj=125°c, Igbt, (mj)
6.5
Rthjc, Max, Igbt, (°c/w)
0.62
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
ISOPLUS247
Ultra-low Vsat PT IGBTs for
up to 5kHz switching
Symbol
V
V
V
V
I
I
SSOA
(RBSOA)
P
T
T
T
F
T
T
V
Weight
Symbol
(T
BV
V
I
I
V
© 2008 IXYS CORPORATION, All rights reserved
GenX3
C110
CM
CES
GES
J
JM
stg
C
L
SOLD
CES
CGR
GES
GEM
C
ISOL
GE(th)
CE(sat)
J
CES
= 25°C, unless otherwise specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
V
Clamped inductive load @ V
T
Mounting Force
1.6mm (0.063 in.) from case for 10s
Plastic body for 10s
50/60 Hz, RMS
I
I
I
V
V
V
I
Test Conditions
ISOL
C
C
C
J
J
C
C
C
GE
CE
GE
CE
= 250μA, V
= 250μA, V
= 25°C to 150°C
= 25°C to 150°C, R
= 60A, V
= 110°C
= 25°C, 1ms
= 15V, T
= 25°C
600V IGBT
= V
= 0V
= 0V, V
≤ 1mA
CES
GE
VJ
GE
GE
CE
= ± 20V
= 125°C, R
= 15V, Note
= V
= 0V
GE
GE
= 1MΩ
G
= 3Ω
T
CE
J
= 125°C
≤ ≤ ≤ ≤ ≤ 600V
IXGR72N60A3
20..120/4.5..27
t = 1min 2500
t = 1s
Characteristic Values
600
3.0
Min.
-55 ... +150
-55 ... +150
Maximum Ratings
I
CM
= 150
3000
± 30
± 20
600
600
400
200
150
300
260
Typ.
52
5
± 100
1.35
Max.
750
5.0
75
N/lb.
V~
V~
μA
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
V
g
V
I
V
t
ISOPLUS247
G = Gate
C = Collector
Features
Advantages
Applications
C110
fi(typ)
Silocon chip on Direct-Copper Bond
(DCB) substrate
Isolated mounting surface
2500V electrical isolation
High power density
Low gate drive requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Protection Circuits
CES
CE(sat)
G
E153432
C
E
≤ ≤ ≤ ≤ ≤ 1.35V
= 600V
= 52A
= 250ns
TM
(IXGR)
Isolated Tab
E
DS99963A(07/08)
= Emitter

Related parts for IXGR72N60A3

IXGR72N60A3 Summary of contents

Page 1

... 0V ± 20V GES 60A 15V, Note CE(sat © 2008 IXYS CORPORATION, All rights reserved IXGR72N60A3 Maximum Ratings 600 = 1MΩ 600 ± 20 ± 400 = 3Ω 150 G CM ≤ ≤ ≤ ≤ ≤ 600V CE 200 -55 ... +150 150 -55 ...

Page 2

... CE CES 1.4 320 250 3 2.6 510 375 6.5 0.15 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGR72N60A3 ISOPLUS247 (IXGR) Outline Max 0.62 °C/W °C/W 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 ...

Page 3

... GE 13V 1.3 11V 9V 1.2 1.1 1.0 7V 0.9 0.8 5V 0.7 1.0 1.2 1.4 1.6 1.8 200 180 T = 25ºC J 160 140 120 100 IXGR72N60A3 Fig. 2. Extended Output Characteristics @ 25º 15V GE 13V 11V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V GE -50 - Degrees Centigrade J Fig. 6. Input Admittance T = 125º ...

Page 4

... IXYS reserves the right to change limits, test conditions, and dimensions 40ºC J 25ºC 125ºC 120 140 160 180 200 C ies C oes C res Fig. 11. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXGR72N60A3 Fig. 8. Gate Charge 300V 60A ...

Page 5

... IXGR72N60A3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off 3Ω 15V 480V 125º ...

Page 6

... 15V 480V 25A 105 115 125 IXGR72N60A3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on 3Ω 15V 480V Amperes 25º 125º ...

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