IXGX50N90B2D1 IXYS, IXGX50N90B2D1 Datasheet
IXGX50N90B2D1
Specifications of IXGX50N90B2D1
Related parts for IXGX50N90B2D1
IXGX50N90B2D1 Summary of contents
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... ± GES Note 1 CE(sat) C110 C GE © 2006 IXYS All rights reserved IXGH 50N90B2D1 IXGK 50N90B2D1 IXGX 50N90B2D1 Maximum Ratings 900 = 1 MΩ 900 GE ± 20 ± 200 = 10 Ω 100 G CM ≤ ...
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... R with heat transfer paste thCH Pulse test, t ≤ 300 μs, duty cycle ≤ Note 1: IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or more of the following U.S. patents: 4,850,072 4,881,106 IXGH 50N90B2D1 IXGK 50N90B2D1 = I ...
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... V - Volts CE Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 6.5 6.0 5 100A C 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1 Volts G E © 2006 IXYS All rights reserved IXGH 50N90B2D1 IXGK 50N90B2D1 º C 300 250 9V 200 150 7V 100 5V 2.5 3 3.5 4 4.5 C 1.3 1.2 9V 1.1 1.0 7V 0.9 0.8 5V 0.7 3 3.5 4 4.5 250 º 225 T ...
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... 720V 800 CE 700 600 500 400 300 200 Ohms G IXYS reserves the right to change limits, test conditions, and dimensions. IXGH 50N90B2D1 IXGK 50N90B2D1 125 150 175 200 225 C º 125 C J º ...
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... T - Degrees Centigrade J Fig. 15. Capacitance 10000 MHz 1000 100 Volts 0.1 0.01 0.1 © 2006 IXYS All rights reserved IXGH 50N90B2D1 IXGK 50N90B2D1 15 13.5 12 10.5 9 7 100A 3 C 50A 1.5 25A 105 115 125 110 100 ies ...
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... versus K/W Z thJC 0.1 0.01 0.001 0.00001 0.0001 0.001 Fig. 24 Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. IXGH 50N90B2D1 IXGK 50N90B2D1 100°C μ 600V 60A 30A ...
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... IXYS reserves the right to change limits, test conditions, and dimensions without notice. © 2006 IXYS All rights reserved ...