IXGA12N100U1 IXYS, IXGA12N100U1 Datasheet
IXGA12N100U1
Manufacturer Part Number
IXGA12N100U1
Description
Low-Frequency Range (DC-15khz), Low Vcesat w/ Diode
Manufacturer
IXYS
Datasheet
1.IXGA12N100U1.pdf
(4 pages)
Specifications of IXGA12N100U1
Vces, (v)
1000
Ic25, Tc=25°c, Igbt, (a)
24
Ic90, Tc=90°c, Igbt, (a)
12
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.5
Tfi, Typ, Tj=25°c, Igbt, (ns)
800
Eoff, Typ, Tj=125°c, Igbt, (mj)
10
Rthjc, Max, Igbt, (°c/w)
1.25
If, Tj=110°c, Diode, (a)
12
Rthjc, Max, Diode, (ºc/w)
2.5
Package Style
TO-263 (D2 PAK)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXGA12N100U1
Manufacturer:
IXYS
Quantity:
18 000
© 2000 IXYS All rights reserved
IGBT
Combi Pack
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
(T
BV
V
I
I
V
IXYS reserves the right to change limits, test conditions, and dimensions.
C25
C90
CM
CES
GES
J
JM
stg
CGR
C
CES
GES
GEM
GE(th)
CE(sat)
d
J
CES
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 300 mH
T
Mounting torque with screw M3
Mounting torque with screw M3.5
Test Conditions
I
I
V
V
V
I
C
C
C
C
C
C
C
J
J
GE
CE
GE
CE
= 3 mA, V
= 250 mA, V
= 0 V
= 0 V, V
= I
= 0.8, V
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 15 V, T
= 25°C
CE90
, V
GE
CES
GE
VJ
GE
= ±20 V
= 15
GE
= 125°C, R
= 0 V
= V
GE
GE
= 1 MW
G
= 150 W
T
T
12N100
12N100A
J
J
= 25°C
= 125°C
IXGA/IXGP12N100U1
IXGA/IXGP12N100AU1 1000 V
Min.
1000
Maximum Ratings
2.5
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Typ.
I
CM
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
1000
1000
= 24
±20
±30
100
150
300
CES
24
12
48
4
±100
Max.
300
5.5
3.5
4.0
3
mA
mA
nA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
V
V
g
TO-220AB(IXGP)
TO-263 AA (IXGA)
Features
• International standard packages
• IGBT with antiparallel FRED in one
• Second generation HDMOS
• Low V
• MOS Gate turn-on
• Fast Recovery Expitaxial Diode (FRED)
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
Advantages
• Easy to mount with one screw
• Space savings (two devices in one
• Reduces assembly time and cost
• High power density
1000 V
JEDEC TO-220AB and TO-263AA
package
- for minimum on-state conduction
- drive simplicity
- soft recovery with low I
power supplies
package)
V
losses
CES
CE(sat)
G
G C
E
24 A
24 A
I
E
C25
RM
95592A (3/97)
C (TAB)
TM
V
3.5 V
4.0 V
process
CE(sat)
1 - 4
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IXGA12N100U1 Summary of contents
Page 1
... ± GES CE(sat) C CE90 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXGA/IXGP12N100U1 IXGA/IXGP12N100AU1 1000 V Maximum Ratings 1000 = 1 MW 1000 GE ±20 ± 150 ...
Page 2
... V, -di /dt = 100 A/ C90 100 125° -di/ A/ms thJC © 2000 IXYS All rights reserved IXGA12N100U1 IXGA12N100AU1 Characteristic Values Min. Typ 0 CES 24 100 200 = 120 W 850 1000 12N100A 500 12N100 ...
Page 3
... V - Volts CE Figure 3. Saturation Voltage Characteristics 10V Volts GE Figure 5. Admittance Curves © 2000 IXYS All rights reserved IXGA12N100U1 IXGA12N100AU1 25° 125° IXGP12N100U1 IXGP12N100AU1 100 T = 25°C ...
Page 4
... nanocoulombs g Figure 9. Gate Charge 1 D=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 D=0.01 Single pulse 0.01 0.001 0.00001 0.0001 © 2000 IXYS All rights reserved IXGA12N100U1 IXGA12N100AU1 5 1000 800 4 t 600 fi 3 400 2 200 OFF C 100 10 0 Duty Cycle 0.001 0.01 Pulse Width - Seconds Figure 11 ...