IXGV25N250S IXYS, IXGV25N250S Datasheet - Page 4

• Manufacturer Part Number: IXGV25N250S
• Description: VHV NPT IGBTs (2500V - 4000V)
• Manufacturer: IXYS

Specifications of IXGV25N250S

• Vces, (v): 2500
• Ic25, Tc=25°c, Igbt, (a): 60
• Ic110, Tc=110°c, Igbt, (a): 25
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.90
• Tfi, Typ, Igbt, (ns): -
• Eoff, Typ, Tj=125°c, Igbt, (mj): -
• Rthjc, Max, Igbt, (k/w): 0.50

IXYS reserves the right to change limits, test conditions, and dimensions.
700
650
600
550
500
450
400
350
300
250
200
245
240
235
230
225
220
215
210
205
200
195
190
36
33
30
27
24
21
18
15
12
9
6
3
0
Fig. 11. Resistive Turn-off Switching Times
50
0
25
t
R
V
f
G
CE
R
V
V
35
20
60
= 5Ω, V
G
GE
CE
= 1250V
= 5Ω
Fig. 9. Resistive Turn-on Rise Time
= 1250V
= 15V
vs. Junction Temperature
45
40
70
T
t
GE
J
d(off)
Fig. 7. Transconductance
T
- Degrees Centigrade
J
55
= 15V
= - 40ºC
60
vs. Collector Current
80
- - - -
125ºC
25ºC
65
I
I
C
I
C
C
80
90
- Amperes
- Amperes
= 150A, 50A
75
I
C
= 50A, 150A
100
100
85
120
110
T
95
J
T
= 125ºC
J
= 25ºC
140
105 115 125
120
160
130
180
140
IXGH25N250 IXGT25N250 IXGV25N250S
220
210
200
190
180
170
160
150
140
130
120
110
200
150
700
680
660
640
620
600
580
560
540
520
500
480
245
240
235
230
225
220
215
210
205
200
195
190
680
640
600
560
520
480
440
400
360
320
280
240
200
50
25
Fig. 12. Resistive Turn-off Switching Times
4
Fig. 10. Resistive Turn-on Switching Times
T
J
t
T
V
r
J
= 125ºC
CE
60
R
V
V
35
= 125ºC, V
G
GE
CE
6
= 1250V
= 5Ω
Fig. 8. Resistive Turn-on Rise Time
= 1250V
= 15V
70
45
8
vs. Collector Current
t
R
V
t
vs. Junction Temperature
vs. Gate Resistance
d(on)
f
G
CE
80
GE
= 5 Ω , V
55
T
= 1250V
I
= 15V
- - - -
J
10
R
C
- Degrees Centigrade
G
90
- Amperes
- Ohms
65
GE
t
d(off)
100 110 120 130 140 150
12
= 15V
- - - -
75
14
85
16
I
I
I
95
C
C
C
= 150A
= 50A
= 150A
T
I
J
C
18
= 25ºC
= 50A
105
20
115
124
120
116
112
108
104
100
96
92
88
84
80
220
210
200
190
180
170
160
150
140
130
120
110
125