IXGF20N300 IXYS, IXGF20N300 Datasheet

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IXGF20N300

Manufacturer Part Number
IXGF20N300
Description
VHV NPT IGBTs (2500V - 4000V)
Manufacturer
IXYS
Datasheet

Specifications of IXGF20N300

Vces, (v)
3000
Ic25, Tc=25°c, Igbt, (a)
22
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.2
Tfi, Typ, Igbt, (ns)
-
Eoff, Typ, Tj=125°c, Igbt, (mj)
-
Tf, Typ, Igbt, (ns)
210
Rthjc, Max, Igbt, (k/w)
1.25
Package Style
ISOPLUS i4-Pak
High Voltage IGBT
For Capacitor Discharge
Applications
( Electrically Isolated Tab)
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
F
V
Weight
Symbol
(T
BV
V
I
I
V
© 2009 IXYS CORPORATION, All Rights Reserved
C25
C90
CM
CES
GES
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
C
ISOL
GE(th)
CE(sat)
J
CES
= 25°C, Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped Inductive Load
T
1.6 mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force
50/60Hz, 1 Minute
Test Conditions
I
I
V
V
I
C
C
C
J
J
C
C
C
C
GE
CE
CE
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 90°C
= 25°C, V
= 20V, T
= 25°C
= 250μA, V
= 250μA, V
= 0.8 • V
= 0V, V
= 20A, V
VJ
GE
GE
CES
GE
= 125°C, R
= ±20V
= 20V, 1ms
= 15V, Note 1
GE
CE
, V
= 0V
= V
GE
= 0V
GE
GE
Note 2, T
= 1MΩ
G
= 10Ω
J
= 125°C
IXGF20N300
20..120/4.5..27
3000
Characteristic Values
Min.
3.0
-55 ... +150
-55 ... +150
@0.8 • V
Maximum Ratings
I
CM
= 200
4000
3000
3000
± 30
± 20
300
260
103
100
150
Typ.
22
14
CES
6
±100
Nm/lb-in.
5.0
3.2
25
Max.
2 mA
V~
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
A
V
V
g
V
I
V
ISOPLUS i4-Pak
1 = Gate
2 = Emitter
Features
Applications
Advantages
C25
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
4000V Electrical Isolation
High Peak Current Capability
Low Saturation Voltage
Molding Epoxies Meet UL 94 V-0
Flammability Classification
Capacitor Discharge
Pulser Circuits
High Power Density
Easy to Mount
CES
CE(sat)
1
2
≤ ≤ ≤ ≤ ≤
=
5
= 3000V
5 = Collector
TM
3.2V
22A
Isolated Tab
DS100099B(11/09)

Related parts for IXGF20N300

IXGF20N300 Summary of contents

Page 1

... CES CE CES 0V ±20V GES 20A 15V, Note 1 CE(sat © 2009 IXYS CORPORATION, All Rights Reserved IXGF20N300 Maximum Ratings 3000 = 1MΩ 3000 GE ± 20 ± 103 = 10Ω 200 G CM @0.8 • V CES 100 -55 ... +150 150 -55 ... +150 ...

Page 2

... 486 145 210 0.15 30 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGF20N300 ISOPLUS i4-Pak Max 1.25 °C/W °C/W °C/W 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 ...

Page 3

... 25V GE 20V 15V 10V 15V 80A IXGF20N300 Fig. 2. Extended Output Characteristics @ 25V GE 20V 15V 80 10V Volts CE Fig. 4. Dependence of V Junction Temperature 3 15V 3 ...

Page 4

... Fig. 11. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXGF20N300 Fig. 8. Gate Charge V = 600V 20A 10mA NanoCoulombs G Fig. 10. Capacitance MHz C ies ...

Page 5

... V = 15V GE 700 = 960V 160 600 500 140 400 120 300 200 100 100 IXGF20N300 Fig. 13. Resistive Turn-on Rise Time vs. Collector Current T = 125º 10Ω 15V 960V 25º Amperes C Fig ...

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