IXGF25N300 IXYS, IXGF25N300 Datasheet - Page 2

• Manufacturer Part Number: IXGF25N300
• Description: VHV NPT IGBTs (2500V - 4000V)
• Manufacturer: IXYS

Specifications of IXGF25N300

• Vces, (v): 3000
• Ic25, Tc=25°c, Igbt, (a): 27
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3
• Tfi, Typ, Igbt, (ns): -
• Eoff, Typ, Tj=125°c, Igbt, (mj): -
• Rthjc, Max, Igbt, (k/w): 1.1
• Package Style: ISOPLUS i4-Pak

Symbol
(T
g
I
C
C
C
Q
Q
Q
t
t
t
t
R
R
R
Notes:
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
C(ON)
d(on)
r
d(off)
f
fs
ies
oes
res
thJC
thCS
thJA
g(on)
ge
gc
J
= 25°C, Unless Otherwise Specified)
1.
2. Device must be heatsunk for high-temperature leakage current
measurements to avoid thermal runaway.
Pulse test, t < 300μs, duty cycle, d < 2%.
Test Conditions
I
V
V
I
Resistive Switching Times
I
V
C
C
C
CE
GE
CE
= 25A, V
= 50A, V
= 50A, V
= 1500V, R
= 15V, V
= 15V, V
GE
CE
GE
GE
CE
= 10V, Note 1
= 15V
= 15V, V
= 20V, Note 1
= 20V, f = 1MHz
G
4,835,592
4,881,106
= 5Ω
CE
= 0.5 • V
4,931,844
5,017,508
5,034,796
CES
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
Characteristic Values
Min.
16
6,162,665
6,259,123 B1
6,306,728 B1
2970
0.15
Typ.
240
240
220
500
26
98
36
75
15
30
70
30
1.10 °C/W
6,404,065 B1
6,534,343
6,583,505
Max.
°C/W
°C/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
S
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
ISOPLUS i4-Pak
6,727,585
6,771,478 B2 7,071,537
IXGF25N300
7,005,734 B2
7,063,975 B2
TM
Pin 1 = Gate
Pin 2 = Emitter
Pin 3 = Collector
Tab 4 = Isolated
(HV) Outline
7,157,338B2