IXCK36N250 IXYS, IXCK36N250 Datasheet
IXCK36N250
Specifications of IXCK36N250
Related parts for IXCK36N250
IXCK36N250 Summary of contents
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... CES CE CES GE = ±25V 0V, V GES 36A 15V, Note 1 CE(sat © 2011 IXYS CORPORATION, All Rights Reserved IXCH36N250 IXCK36N250 Maximum Ratings 2500 Ω 2500 ± 25 ± 360 Ω 144 G CM ≤ V 0.8 • CES 10 595 -55 ...
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... TO-264 (IXCK) Outline Max 2.5 V μs A Terminals Gate 2,4 = Collector 3 = Emitter > 1200V. CE 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXCH36N250 IXCK36N250 ∅ Collector Inches Max. Min. Max. 5.3 .185 .209 2.54 .087 .102 2.6 .059 .098 1.4 .040 .055 2.13 .065 ...
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... Fig. 4. Dependence of V Junction Temperature V = 15V 72A 36A 18A C -50 - Degrees Centigrade J Fig. 6. Input Admittance 125ºC J 25º 40º 5.5 6 6 Volts GE IXCH36N250 IXCK36N250 = 25º CE(sat) 75 100 125 150 8.5 9 9.5 10 10.5 ...
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... Fig. 8. Forward Voltage Drop of Intrinsic Diode T = 25º 0 Volts F Fig. 10. Capacitance MHz Volts CE Fig. 12. Maximum Transient Thermal Impedance 1 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXCH36N250 IXCK36N250 T = 125º 2 ies C oes C res 0 ...
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... Fig. 14. Forward-Bias Safe Operating Area @ T C 1000 V Limit CE(sat) 100 25µs 100µs 10 1ms 1 10ms 0.1 100ms T = 150º 75ºC C Single Pulse 0.01 1000 10000 1 IXCH36N250 IXCK36N250 = 75ºC C 25µs 100µs 1ms 10ms 100ms DC 10 100 1000 V - Volts CE IXYS REF: C_36N250(8M)8-24-11 10000 ...