IXBF55N300 IXYS, IXBF55N300 Datasheet - Page 2

• Manufacturer Part Number: IXBF55N300
• Description: VHV (2500V-3000V)
• Manufacturer: IXYS

Specifications of IXBF55N300

• Vces, (v): 3000
• Ic25, Tc=25°c, (a): 86
• Ic90, Tc=90°c, (a): -
• Ic110, Tc=110°c, (a): 34
• Vce(sat), Typ, Tj=25°c, (v): 3.2
• Tf Typ, Tj=25°c, (ns): 268
• Tfi Typ, Tj=25°c, (ns): -
• Gate Drive, (v): 15
• Rthjc, Max, (k/w): 0.35
• Package Style: ISOPLUS I4-Pak

Symbol Test Conditions
(T
g
C
C
C
Q
Q
Q
t
t
t
t
t
t
t
t
R
R
Reverse Diode
Symbol Test Conditions
(T
V
t
I
Notes:
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
RM
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
fS
F
ies
oes
res
thJC
thCS
g
ge
gc
J
J
= 25°C Unless Otherwise Specified)
= 25°C Unless Otherwise Specified)
1.
2. Device must be heatsunk for high-temperature leakage current
measurements to avoid thermal runaway.
Pulse test, t < 300μs, duty cycle, d < 2%.
Resistive Switching Times, T
I
V
Resistive Switching Times, T
I
V
I
I
V
I
V
I
C
C
F
C
C
F
CE
CE
R
CE
= 28A, V
= 110A, V
= 110A, V
= 55A, V
= 55A, V
= 55A, V
= 100V, V
= 1250V, R
= 1250V, R
= 25V, V
GE
GE
GE
CE
GE
GE
GE
GE
= 0V, -di
= 15V, V
= 0V, Note 1
= 10V, Note 1
= 15V
= 15V
= 0V, f = 1MHz
G
G
= 0V
4,835,592
4,881,106
= 2
= 2
Ω
Ω
F
CE
/dt = 100A/μs
= 1000V
4,931,844
5,017,508
5,034,796
J
J
= 25°C
= 125°C
5,049,961
5,063,307
5,187,117
Min.
Characteristic Values
32
5,237,481
5,381,025
5,486,715
Min.
Characteristic Values
Typ.
7300
0.15
335
130
307
230
215
260
6,162,665
6,259,123 B1
6,306,728 B1
275
268
585
47
50
83
54
52
1.9
Typ.
54
Max.
0.35 °C/W
6,404,065 B1
6,534,343
6,583,505
2.5
Max
°C/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
μs
ns
ns
ns
V
A
S
6,683,344
6,710,405 B2 6,759,692
6,710,463
ISOPLUS i4-Pak
6,727,585
6,771,478 B2 7,071,537
IXBF55N300
7,005,734 B2
7,063,975 B2
Pin 1 = Gate
Pin2 = Emitter
Pin 3 = Collector
Tab 4 = Isolated
TM
(HV) Outline
7,157,338B2