MIXA30W1200TMH IXYS, MIXA30W1200TMH Datasheet - Page 6

• Manufacturer Part Number: MIXA30W1200TMH
• Description: 1200V XPT Modules
• Manufacturer: IXYS

Specifications of MIXA30W1200TMH

• Vces, Igbt, (v): 1200
• Ic80, Igbt, (a): 30
• Vce(sat), Typ, Tj 25°c (v): 1.8
• Eon, Typ, 125°c (mj): 2.5
• Eoff, Typ, 125°c (mj): 3.0
• Rthjc, Typ, Igbt (k/w): 0.84
• Ic80, Fwd, (a): 29
• Rthjc, Fwd, (k/w): 1.2
• Package Style: Mini-Pack 2

IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
I
[A]
[mJ]
Diode D1 - D6
[A]
E
RR
I
F
rec
2.0
1.6
1.2
0.8
0.4
0.0
60
50
40
30
20
10
70
60
50
40
30
20
10
0
0
300 400 500 600 700 800 900 1000 1100
300 400 500 600 700 800 900 1000 1100
0.0
Fig.11 Typ. recovery energy E
Fig. 9 Typ. peak reverse current I
Fig. 7 Typ. Forward current versus V
T
V
T
V
VJ
R
VJ
R
0.5
= 125°C
= 600 V
= 125°C
= 600 V
T
T
VJ
VJ
= 125°C
= 25°C
1.0
di
di
F
F
V
/dt [A/µs]
/dt [A/µs]
F
1.5
[V]
2.0
rec
versus di/dt
RM
vs. di/dt
2.5
F
60 A
30 A
15 A
60 A
30 A
15 A
3.0
[K/W]
[ns]
Z
t
rr
thJC
[µC]
Q
rr
0.01
700
600
500
400
300
200
100
0.1
10
0.001
7
6
5
4
3
2
1
0
1
300 400 500 600 700 800 900 1000 1100
300 400 500 600 700 800 900 1000 1100
Fig. 8 Typ. reverse recov.charge Q
Fig. 10 Typ. recovery time t
Fig. 12 Typ. transient thermal impedance
T
V
VJ
R
= 125°C
0.01
= 600 V
MIXA30W1200TMH
1
2
3
4
di
di
F
F
0.18 0.0025 0.3413 0.0025
0.14 0.03
0.36 0.03
0.16 0.08
/dt [A/µs]
R
/dt [A/µs]
t
0.1
p
i
IGBT
[s]
rr
t
i
versus di/dt
T
V
0.2171 0.03
0.3475 0.03
0.2941 0.08
VJ
R
1
R
= 125°C
= 600 V
rr
i
vs. di/dt
FRD
Diode
60 A
30 A
15 A
60 A
30 A
15 A
IGBT
t
20101102b
i
10
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