DMA30E1800HA IXYS, DMA30E1800HA Datasheet
DMA30E1800HA
Manufacturer Part Number
DMA30E1800HA
Description
Rectifier (Standard) Diodes
Manufacturer
IXYS
Datasheet
1.DMA30E1800HA.pdf
(3 pages)
Specifications of DMA30E1800HA
Vrrm, (v)
1800
Ifavm, Total, (a)
30
Ifavm, Per Diode, (a)
30
@ Tc, (°c)
140
Prsm, (kw)
-
Ifrms, (a)
70
Ifsm, 10 Ms, Tvj = 45°c, (a)
370
Vt0, (v)
0.88
Rt, (mohms)
12.1
Tvjm, (°c)
175
Rthjc, Max, (k/w)
0.70
Rthch, (k/w)
0.25
Package Style
TO-247AD
Standard Rectifier
Single Diode
Part number
DMA 30 E 1800 HA
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
Symbol
V
V
V
r
T
P
I
I²t
C
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
I
I
R
Features / Advantages:
R
FAV
FSM
F
RRM
F0
VJ
tot
F
thJC
J
average forward current
Definition
max. repetitive reverse voltage
reverse current
forward voltage
threshold voltage
slope resistance
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
value for fusing
junction capacitance
for power loss calculation only
Applications:
● Diode for main rectification
● For single and three phase
Conditions
V =
V =
I =
I =
I =
I =
rectangular
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
V =
F
F
F
F
R
R
R
bridge configurations
1800
1800
400
30
60
30
60
Data according to IEC 60747and per diode unless otherwise specified
3
A
A
A
A
V
V
V; f = 1 MHz
d =
0.5
1
T
T
T
T
T
T
T
T
T
V
T
V
T
V
T
V
T
VJ
VJ
VJ
VJ
VJ
C
VJ
C
VJ
R
VJ
R
VJ
R
VJ
R
VJ
= 25°C
= 25°C
=
= 25°C
=
=
=
= 25°C
=
=
=
=
= 25°C
= 0 V
= 0 V
= 0 V
= 0 V
DMA 30 E 1800 HA
150
150
140
175
150
150
45
45
● Housing:
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
V
I
V
Package:
°C
°C
°C
°C
°C
°C
°C
°C
FAV
RRM
F
min.
=
=
=
-55
R a t i n g s
TO-247
1800
typ.
1.25 V
10
30
Backside: anode
max.
1800
1.27
1.50
1.25
1.57
0.88
12.1
0.70 K/W
V
A
175
210
370
400
315
340
685
665
495
480
1.5
tentative
40
30
20100528
Unit
mΩ
mA
A²s
A²s
A²s
A²s
µA
pF
°C
W
V
V
V
V
V
A
V
A
A
A
A
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DMA30E1800HA Summary of contents
Page 1
... FSM I²t value for fusing C junction capacitance J IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved 3 1 Applications: ● Diode for main rectification ● For single and three phase bridge configurations ...
Page 2
... DMA 30 E 1800 HA Standard IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved Conditions per pin Part Name Marking on Product DMA30E1800HA Data according to IEC 60747and per diode unless otherwise specified DMA 30 E 1800 HA Ratings min. typ. 0.25 -55 ...
Page 3
... Ø Ø IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved A A2 Sym. Inches Millimeter min. max. min. A 0.185 0.209 4.70 A1 0.087 0.102 2.21 A2 0.059 0.098 1.50 D 0.819 0.845 20 ...