IRG4PH50UD International Rectifier, IRG4PH50UD Datasheet

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IRG4PH50UD

Manufacturer Part Number
IRG4PH50UD
Description
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4PH50UD

Package
TO-247
Circuit
Co-Pack
Switching
Hard
Switching Speed
ULTRAFAST 8-30 kHz
Vces (v)
1200
Ic @ 25c (a)
45
Ic @ 100c (a)
24
Vce(on)@25c Typ (v)
2.78
Vce(on)@25c Max (v)
3.70
Ets Typ (mj)
3.6
Ets Max (mj)
4.1
Qrr Typ Nc 25c
260
Qrr Max Nc 25c
675
Vf Typ
2.50
Pd @25c (w)
200
Environmental Options
PbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Features
Features
Features
Features
• UltraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
• New IGBT design provides tighter
parameter distribution and higher efficiency than
previous generations
• IGBT co-packaged with HEXFRED
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-247AC package
Benefits
• Higher switching frequency capability than
competitive IGBTs
• Highest efficiency available
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
Absolute Maximum Ratings
Parameter
V
Collector-to-Emitter Breakdown Voltage
CES
I
@ T
= 25°C
Continuous Collector Current
C
C
I
@ T
= 100°C
Continuous Collector Current
C
C
Pulsed Collector Current Q
I
CM
Clamped Inductive Load Current R
I
LM
I
@ T
= 100°C
Diode Continuous Forward Current
F
C
I
Diode Maximum Forward Current
FM
V
Gate-to-Emitter Voltage
GE
P
@ T
= 25°C
Maximum Power Dissipation
D
C
P
@ T
= 100°C
Maximum Power Dissipation
D
C
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
Parameter
R
Junction-to-Case - IGBT
θJC
R
Junction-to-Case - Diode
θJC
R
Case-to-Sink, flat, greased surface
θCS
R
Junction-to-Ambient, typical socket mount
θJA
Wt
Weight
www.irf.com
G
TM
ultrafast,
n-cha nn el
300 (0.063 in. (1.6mm) from case )
Min.
–––
–––
–––
–––
–––
PD 91573A
IRG4PH50UD
UltraFast CoPack IGBT
C
V
= 1200V
CES
= 2.78V
V
CE(on) typ.
@V
= 15V, I
= 24A
GE
C
E
TO-247AC
Max.
Units
1200
V
45
24
A
180
180
16
180
± 20
V
200
W
78
-55 to + 150
°C
10 lbf•in (1.1N•m)
Typ.
Max.
Units
–––
0.64
–––
0.83
°C/W
0.24
–––
–––
40
6 (0.21)
–––
g (oz)
7/7/2000
1

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IRG4PH50UD Summary of contents

Page 1

... Wt Weight www.irf.com G TM ultrafast, n-cha nn el 300 (0.063 in. (1.6mm) from case ) Min. ––– ––– ––– ––– ––– PD 91573A IRG4PH50UD UltraFast CoPack IGBT 1200V CES = 2.78V V CE(on) typ 15V 24A TO-247AC Max ...

Page 2

... IRG4PH50UD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown VoltageS (BR)CES ∆V Temperature Coeff. of Breakdown Voltage /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th) J Forward Transconductance Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop ...

Page 3

... RMS 1000 100  T = 150 15V Fig Typical Transfer Characteristics IRG4PH50UD ° ° C sink riv ifie tio ...

Page 4

... IRG4PH50UD 100 T , Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature 1 0.50 0.20 0.1 0.10 0.05 0.02  0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.001 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 4 15V PULSE WIDTH 3.5 3.0 2.5 2.0 125 150 -60 -40 -20 ° C) Fig Typical Collector-to-Emitter Voltage vs ...

Page 5

... Fig Typical Gate Charge vs.  100 R = Ohm 15V 800V -60 -40 - Ω Fig Typical Switching Losses vs. IRG4PH50UD = 400V = 24A 40 80 120 160 Q , Total Gate Charge (nC) G Gate-to-Emitter Voltage Ω 5 ...

Page 6

... IRG4PH50UD  15 Ω Ohm 5 150 C ° 480V 15V Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current Fig Typical Forward Voltage Drop vs. Instantaneous Forward Current 6  1000 V T 100 ...

Page 7

... Fig Typical Recovery Current vs 200V T = 125° 25° /dt Fig Typical di f IRG4PH50UD . / /µ ...

Page 8

... IRG4PH50UD Same ty pe device as D .U.T. 430µF 80% of Vce D .U .T. Fig. 18a - Test Circuit for Measurement off(diode d(on ...

Page 9

... www.irf.com D.U. 800V IRG4PH50UD 800V @25° ...

Page 10

... IRG4PH50UD Q Repetitive rating: V =20V; pulse width limited by maximum junction temperature GE (figure 20 =80%( =20V, L=10µ CES GE S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot (. (. (. ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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