IRG7PH42UD1-EP International Rectifier, IRG7PH42UD1-EP Datasheet

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IRG7PH42UD1-EP

Manufacturer Part Number
IRG7PH42UD1-EP
Description
1200V UltraFast Copack IGBT in a TO-247 package
Manufacturer
International Rectifier
Datasheet

Specifications of IRG7PH42UD1-EP

Package
TO-247
Circuit
Co-Pack
Switching
Soft
Switching Speed
ULTRAFAST 8-30 kHz
Vces (v)
1200
Ic @ 25c (a)
85
Ic @ 100c (a)
45
Vce(on)@25c Typ (v)
1.70
Vce(on)@25c Max (v)
2.00
Ets Typ (mj)
3.29
Ets Max (mj)
3.8
Vf Typ
1.15
Pd @25c (w)
313
Environmental Options
PbF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRG7PH42UD1-EP
Quantity:
5 000
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
Features
• Low V
• Low switching losses
• Square RBSOA
• Ultra-low V
• 1300Vpk repetitive transient capacity
• 100% of the parts tested for I
• Positive V
• Tight parameter distribution
• Lead free package
Benefits
• Device optimized for induction heating and soft switching
• High Efficiency due to Low V
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
• Low EMI
1
V
I
I
I
I
I
I
I
I
V
P
P
T
T
R
R
R
R
Absolute Maximum Ratings
Thermal Resistance
C
C
NOMINAL
CM
LM
F
F
FRM
J
STG
CES
GE
D
D
θJC
θJC
θCS
θJA
and Ultra-low V
@ T
@ T
@ T
@ T
applications
@ T
@ T
(IGBT)
(Diode)
C
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
CE (ON)
CE (ON)
F
Diode
trench IGBT technology
F
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current, V
Clamped Inductive Load Current, V
Diode Continous Forward Current
Diode Continous Forward Current
Diode Repetitive Peak Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
temperature co-efficient
CE(on)
LM

, low switching losses
GE
=15V
Parameter
Parameter
dh
GE
=20V
d
c
f
f
G
n-channel
C
E
Min.
IRG7PH42UD1PbF
300 (0.063 in. (1.6mm) from case)
–––
–––
–––
–––
Gate
G
C
IRG7PH42UD1PbF
TO-247AC
IRG7PH42UD1-EP
10 lbf·in (1.1 N·m)
-55 to +150
G C
Max.
1200
Typ.
0.24
±30
200
120
120
313
125
–––
–––
85
45
30
70
35
40
E
Collector
V
T
CE(on)
I
V
C
J(max)
NOMINAL
CES
IRG7PH42UD1-EP
Max.
1.05
typ. = 1.7V
–––
–––
= 1200V
0.4
= 150°C
C
TO-247AD
= 30A
PD -
www.irf.com
February 17, 2012
Emitter
G C
97480A
E
Units
Units
°C/W
°C
W
V
A
V
E

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IRG7PH42UD1-EP Summary of contents

Page 1

... IRG7PH42UD1- 1200V CES I = 30A NOMINAL T = 150°C J(max typ. = 1.7V CE(on TO-247AC TO-247AD IRG7PH42UD1PbF IRG7PH42UD1- Gate Collector Max. 1200 200 120 70 35 120 ±30 313 125 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Min. ...

Page 2

... IRG7PH42UD1PbF/IRG7PH42UD1-EP Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Repetitive Transient Collector-to-Emitter Voltage CES(Transient) Temperature Coeff. of Breakdown Voltage ΔV /ΔT (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) gfe Forward Transconductance I Collector-to-Emitter Leakage Current ...

Page 3

... V CE (V) Fig Typ. IGBT Output Characteristics T = -40° 80μs J www.irf.com IRG7PH42UD1PbF/IRG7PH42UD1-EP 100 125 150 1.0mA 125 150 18V 15V 12V 10V 8. Fig Typ. IGBT Output Characteristics 350 ...

Page 4

... IRG7PH42UD1PbF/IRG7PH42UD1-EP 120 18V 15V 100 12V 10V 8. (V) Fig Typ. IGBT Output Characteristics T = 150° 80μ (V) Fig Typical -40° ...

Page 5

... Fig Typ. Energy Loss vs 150° 200μ 600V 10000 1000 100 (V) Fig Typ. Capacitance vs 0V 1MHz GE www.irf.com IRG7PH42UD1PbF/IRG7PH42UD1-EP E OFF 10Ω 15V T = 150° 200μ 10000 75 100 125 G = 30A; V ...

Page 6

... IRG7PH42UD1PbF/IRG7PH42UD1- 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 Fig. 20. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE τ ...

Page 7

... DUT 0 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) diode clamp / DUT L -5V DUT / DRIVER Rg Fig.C.T.3 - Switching Loss Circuit www.irf.com IRG7PH42UD1PbF/IRG7PH42UD1- VCC - VCC G force Fig.C.T.4 - BVCES Filter Circuit 800 tf 700 600 500 400 90 300 200 100 CE 0 Eoff Loss ...

Page 8

... IRG7PH42UD1PbF/IRG7PH42UD1-EP EXAMPLE: THIS IS AN IRFPE30 WITH AS SEMBLY LOT CODE 5657 ASS EMBLED ON WW 35, 2001 IN THE AS SEMBLY LINE "H" Note: "P" sembly line pos ition indicates "Lead-Free" TO-247AC package is not recommended for Surface Mount Application. 8 INTERNAT IONAL RECT IFIER ...

Page 9

... Note: "P" sembly line pos ition indicates "Lead-Free" TO-247AD package is not recommended for Surface Mount Application. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com IRG7PH42UD1PbF/IRG7PH42UD1-EP INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE Data and specifications subject to change without notice ...

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