CM800HB-66H Powerex Inc, CM800HB-66H Datasheet
CM800HB-66H
Specifications of CM800HB-66H
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CM800HB-66H Summary of contents
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... 10. NUTS 10.65 48.8 61.5 18 HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) MITSUBISHI HVIGBT MODULES CM800HB-66H HIGH POWER SWITCHING USE I C ................................................................... V CES ....................................................... Insulated Type 1-element in a pack NUTS 7MOUNTING HOLES 15 40 5.2 LABEL INSULATED TYPE ...
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... 800A, E die / dt = –1600A / s Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied ) does not exceed T j MITSUBISHI HVIGBT MODULES CM800HB-66H HIGH POWER SWITCHING USE INSULATED TYPE Ratings Unit 3300 20 800 (Note 1) 1600 800 (Note 1) 1600 10400 – ...
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... T = 125 C j 1200 1600 ( 125 1200 1600 ( MITSUBISHI HVIGBT MODULES CM800HB-66H HIGH POWER SWITCHING USE INSULATED TYPE TRANSFER CHARACTERISTICS ( TYPICAL ) V =10V 125 GATE-EMITTER VOLTAGE V GE ...
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... G MITSUBISHI HVIGBT MODULES CM800HB-66H HIGH POWER SWITCHING USE INSULATED TYPE OF FREE-WHEEL DIODE ( TYPICAL ) 1650V 125 Inductive load V = 15V 2 ...