CM1200HG-90R Powerex Inc, CM1200HG-90R Datasheet - Page 6

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CM1200HG-90R

Manufacturer Part Number
CM1200HG-90R
Description
Manufacturer
Powerex Inc
Type
IGBT Moduler
Datasheet

Specifications of CM1200HG-90R

Prx Availability
RequestQuote
Voltage
4500V
Current
1200A
Circuit Configuration
Single
Rohs Compliant
No
< HVIGBT MODULES >
CM1200HG-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
June 2011
FREE-WHEEL DIODE REVERSE RECOVERY
100
0.1
12
10
10
8
6
4
2
0
1
HALF-BRIDGE SWITCHING ENERGY
100
0
V
V
T
CHARACTERISTICS (TYPICAL)
CHARACTERISTICS (TYPICAL)
V
R
T
CC
GE
j
= 125°C, Inductive load
CC
j
G(on)
= 125°C, Inductive load
= ±15V, L
= 2800V, I
= 2800V, V
= 2.7Ω, L
S
5
C
Emitter Current [A]
= 150nH
Gate resistor [Ohm]
= 1200A
GE
S
= 150nH
= ±15V
E
off
1000
10
15
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
I
t
rr
rr
10000
20
10000
1000
100
10
6
REVERSE BIAS SAFE OPERATING AREA
0.01
3000
2500
2000
1500
1000
100
HALF-BRIDGE SWITCHING TIME
0.1
500
10
CHARACTERISTICS (TYPICAL)
1
0
100
0
V
R
L
Inductive load
V
T
S
CC
CC
j
G(on)
= 125°C, R
= 150nH, T
t
r
t
f
= 2800V, V
≤ 3200V, V
Collector-Emitter Voltage [V]
1000
= 2.7Ω, R
Collector Current [A]
(RBSOA)
G(off)
j
= 125°C
GE
GE
G(off)
= ±15V
= ±15V
= 10Ω
2000
= 10Ω
1000
3000
4000
t
t
d(on)
d(off)
10000
5000

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