CM400E2G-130H

Manufacturer Part NumberCM400E2G-130H
ManufacturerPowerex Inc
TypeIGBT Module
CM400E2G-130H datasheet
 

Specifications of CM400E2G-130H

Prx AvailabilityRequestQuoteVoltage6500V
Current400ACircuit ConfigurationChopper, Buck, Boost
Rohs CompliantNo  
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Prepared by
Revision: B
K.Kurachi
Date
I.Umezaki 24-Feb.-2009
th
3
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM400E2G-130H
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
MITSUBISHI HVIGBT MODULES
CM400E2G-130H
HIGH POWER SWITCHING USE
INSULATED TYPE
● I
………………………
400 A
C
● V
……………………
6500 V
CES
● 1-element in a Pack (for brake chopper)
● Insulated Type
● AlSiC Baseplate
HVM-1048-B
Dimensions in mm
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CM400E2G-130H Summary of contents

  • Page 1

    ... APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES MITSUBISHI HVIGBT MODULES CM400E2G-130H HIGH POWER SWITCHING USE INSULATED TYPE ● I ……………………… ...

  • Page 2

    ... (Note ± Ω GE G(on) (Note 125 ° 170 (Note µs , Inductive load (IGBT_off) MITSUBISHI HVIGBT MODULES CM400E2G-130H HIGH POWER SWITCHING USE INSULATED TYPE Ratings Unit 5800 6300 V 6500 ± 400 A 800 A 400 A 800 A 5900 W ...

  • Page 3

    ... Note 5. on(10%) off(10%) rec(10%) t definition is shown as follows. Note 6. (IGBT_off HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES CM400E2G-130H Conditions Junction to Case, IGBT part Junction to Case, FWDi part Junction to Case, Clamp-Di part Case to Fin, λ = 1W/m· 100 µm grease (c-f) Conditions M8: Main terminals screw ...

  • Page 4

    ... ∫ ic•vce dt Eon = t1 t2 ∫ = – Qrr – Erec 10 MITSUBISHI HVIGBT MODULES CM400E2G-130H HIGH POWER SWITCHING USE INSULATED TYPE 90 50%I C 10%V 10 td(off) tf2 t4 ∫ Eoff = (0.9ic − 0.1ic) / (di/dt toff = td(off ...

  • Page 5

    ... FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 800 Tj = 125°C 600 400 200 MITSUBISHI HVIGBT MODULES CM400E2G-130H HIGH POWER SWITCHING USE INSULATED TYPE (TYPICAL 125° 25° Gate - Emitter Voltage [ 125° 25°C ...

  • Page 6

    ... CHARACTERISTICS (TYPICAL 125°C, Inductive load Eon 6 5 Eoff 4 3 Erec 800 1000 0 MITSUBISHI HVIGBT MODULES CM400E2G-130H HIGH POWER SWITCHING USE INSULATED TYPE (TYPICAL 3600V 400A 25° Gate Charge [µC] = 3600V 400A ±15V, L ...

  • Page 7

    ... Tj = 125°C, Inductive load td(off) 10 td(on) 1 0.1 10 1000 = − [K/kW τ [sec MITSUBISHI HVIGBT MODULES CM400E2G-130H HIGH POWER SWITCHING USE INSULATED TYPE = 3600V ±15V GE = 15Ω 170nH S Irr trr 100 1000 Emitter Current [A] ⎧ ⎫ ⎛ ⎞ ⎜ t ⎟ ⎪ ⎪ n − ...

  • Page 8

    ... HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES SAFE OPERATING AREA (SCSOA) 10000 8000 6000 4000 2000 0 6000 8000 6000 8000 MITSUBISHI HVIGBT MODULES CM400E2G-130H HIGH POWER SWITCHING USE INSULATED TYPE SHORT CIRCUIT V ≤ 4500V ±15V 15Ω 50Ω G(on) G(off 125° ...