CM400E4G-130H Powerex Inc, CM400E4G-130H Datasheet

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CM400E4G-130H

Manufacturer Part Number
CM400E4G-130H
Description
Manufacturer
Powerex Inc
Type
IGBT Moduler
Datasheet

Specifications of CM400E4G-130H

Prx Availability
RequestQuote
Voltage
6500V
Current
400A
Circuit Configuration
Chopper, Buck, Boost
Rohs Compliant
No
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3
CM400E4G-130H
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
Prepared by
Date
th
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
K.Kurachi
I.Umezaki 24-Feb.-2009
Revision: B
● I
● V
● 1-element in a Pack (for brake chopper)
● Insulated Type
● AlSiC Baseplate
C
CES
………………………
……………………
CM400E4G-130H
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
HVM-1049-B
400 A
6500 V
INSULATED TYPE
Dimensions in mm
1 of 8

Related parts for CM400E4G-130H

CM400E4G-130H Summary of contents

Page 1

... APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES MITSUBISHI HVIGBT MODULES CM400E4G-130H HIGH POWER SWITCHING USE INSULATED TYPE ● I ……………………… ...

Page 2

... (Note ± Ω GE G(on) (Note 125 ° 170 (Note µs , Inductive load (IGBT_off) MITSUBISHI HVIGBT MODULES CM400E4G-130H HIGH POWER SWITCHING USE INSULATED TYPE Ratings Unit 5800 6300 V 6500 ± 400 A 800 A 400 A 800 A 5900 W ...

Page 3

... Note 5. on(10%) off(10%) rec(10%) t definition is shown as follows. Note 6. (IGBT_off HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES CM400E4G-130H Conditions Junction to Case, IGBT part Junction to Case, FWDi part Junction to Case, Clamp-Di part Case to Fin, λ = 1W/m· 100 µm grease (c-f) Conditions M8: Main terminals screw ...

Page 4

... ∫ ic•vce dt Eon = t1 t2 ∫ = – Qrr – Erec 10 MITSUBISHI HVIGBT MODULES CM400E4G-130H HIGH POWER SWITCHING USE INSULATED TYPE 90 50%I C 10%V 10 td(off) tf2 t4 ∫ Eoff = (0.9ic − 0.1ic) / (di/dt toff = td(off ...

Page 5

... FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 800 Tj = 125°C 600 400 200 MITSUBISHI HVIGBT MODULES CM400E4G-130H HIGH POWER SWITCHING USE INSULATED TYPE (TYPICAL 125° 25° Gate - Emitter Voltage [ 125° 25°C ...

Page 6

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES CAPACITANCE CHARACTERISTICS (TYPICAL) 1000 100 0V 25° 100kHz 0 0.1 1 Collector-Emitter Voltage [V] HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS ...

Page 7

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 100 V = 3600V ±15V 15Ω 50Ω G(on) G(off 170nH ...

Page 8

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES REVERSE BIAS SAFE OPERATING AREA (RBSOA) 1200 V ≤ 4500V ±15V 125° 50Ω G(off) 1000 800 600 400 200 ...

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