Power Transistors
2SC5779
Silicon NPN epitaxial planar type
Power supply for Audio & Visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
• High-speed switching (t
• Low collector-emitter saturation voltage V
• Superior forward current transfer ratio h
• TO-220D built-in: Excellent package with withstand voltage 5 kV
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
guaranteed
Parameter
Parameter
T
stg
a
: storage time/t
= 25°C
C
Symbol
V
V
V
= 25°C ± 3°C
Symbol
T
V
I
P
I
T
V
CBO
CEO
EBO
C
CP
I
I
I
h
h
C
stg
CE(sat)
C
CBO
CEO
EBO
t
t
j
f
CEO
FE1
FE2
stg
t
on
= 25°C
T
FE
f
f
: fall time is short)
CE(sat)
linearity
−55 to +150
Rating
I
V
V
V
V
V
I
V
I
I
V
C
C
C
B1
150
2.0
CB
CE
EB
CE
CE
CE
CC
50
50
10
20
25
= 10 mA, I
= 5 A, I
= 4 A, Resistance loaded
6
= 0.4 A, I
SJD00289AED
= 50 V, I
= 6 V, I
= 2 V, I
= 2 V, I
= 10 V, I
= 50 V, I
= 40 V
B
= 250 mA
C
C
C
B2
Conditions
Unit
B
B
E
C
= 0
= 1 A
= 7 A
°C
°C
W
V
V
V
A
A
= 0
= 0
= 0
= 0.1 A, f = 10 MHz
= − 0.4 A
Internal Connection
1
9.9
Min
200
100
2
±0.3
50
B
3
2.54
5.08
0.8
1.6
1.4
±0.1
±0.2
±0.30
±0.50
±0.2
φ 3.2
Typ
150
±0.1
TO-220D-A1 Package
C
E
Max
0.15
100
100
0.5
0.5
1.0
1
4.6
1: Base
2: Collector
3: Emitter
±0.2
0.55
Unit: mm
2.9
2.6
MHz
Unit
±0.15
mA
µA
µA
µs
µs
µs
V
V
±0.2
±0.1
1