2SK2973 MITSUBISHI, 2SK2973 Datasheet
2SK2973
Manufacturer Part Number
2SK2973
Description
Manufacturer
MITSUBISHI
Datasheet
1.2SK2973.pdf
(3 pages)
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ABSOLUTE MAXIMUM RATINGS
Note1: Above parameters are guaranteed independently.
Note: Above parameters,ratings,limits and conditions are subject to change.
DESCRIPTION
2SK2973 is a MOS FET type transistor specifically designed for
VHF/UHF power amplifiers applications.
FEATURES
• High power gain:Gpe 13dB
• High efficiency:55% typ.
• Source case type SOT-89 package
APPLICATION
For drive stage and output stage of power amplifiers in VHF/UHF
band portable radio sets.
ELECTRICAL CHARACTERISTICS
@V
(connected internally to source)
V
V
P
T
T
I
I
V
C
C
P
h
Symbol
Symbol
DSS
GSS
j
stg
D
DSS
GSS
ch
TH
out
iss
oss
2: Solder on printed board(Copper leaf area;70 70mm,t=1.6mm Epoxy glass)
DD
=9.6V,f=450MHz,Pin=17dBm
Drain to source voltage
Gate to source voltage
Channel dissipation
Junction temperature
Storage temperature
Threshold voltage
Parameter
Parameter
(T
Tc=25˚C
C
V
V
V
V
V
V
(T
=25˚C, unless otherwise noted)
DS
GS
DS
GS
DS
DS
C
=25˚C, unless otherwise noted)
=12V, V
=7V, I
=10V, V
=9.6V, P
=10V, V
=10V, V
Conditions
DS
GS
DS
DS
GS
=1mA
in
=50mW,f=450MHz
=0V
=0V
=0V,f=1MHz
=0V,f=1MHz
(Note2)
Test conditions
OUTLINE DRAWING
SOT-89
-40 to +110
Ratings
1
±10
150
1.5
17
1.5
1.6±0.2
4.6MAX
3.0
2
MAX
MITSUBISHI RF POWER MOS FET
0.53
MARKING
3
Unit
˚C
˚C
W
V
V
0.48MAX
1 : DRAIN
2 : SOURCE
3 : GATE
Min
1.2
45
1
LOT No.
Limits
Typ
1.2
10
55
2SK2973
8
K1
Dimensions in mm
Max
0.4 +0.03
1.8
10
1
TYPE No.
1.5±0.1
-0.05
MARKING
Nov. ´97
Unit
pF
pF
µA
µA
W
%
V
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2SK2973 Summary of contents
Page 1
... DESCRIPTION 2SK2973 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. FEATURES • High power gain:Gpe 13dB @V =9.6V,f=450MHz,Pin=17dBm DD • High efficiency:55% typ. • Source case type SOT-89 package (connected internally to source) APPLICATION For drive stage and output stage of power amplifiers in VHF/UHF band portable radio sets ...
Page 2
... R1 R2 CR10-103 CR10-101 10000 100 C6 GR40-102 1000pF GR40-10 GR40-102 10pF 1000pF 22 µF 50V V GG MITSUBISHI RF POWER MOS FET 2SK2973 I VS 1.2 V =9. =25˚C C 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4 add ...
Page 3
... MITSUBISHI RF POWER MOS FET 2SK2973 V =7V 155.450 0.517 -33.518 134.869 0.497 -60.987 119.517 0.482 -80.439 107.569 0.475 -94.398 97.989 ...