35N120AU1 IXYS Corporation, 35N120AU1 Datasheet

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35N120AU1

Manufacturer Part Number
35N120AU1
Description
Manufacturer
IXYS Corporation
Datasheet
© 2000 IXYS All rights reserved
High Voltage
IGBT with Diode
Combi Pack
Short Circuit SOA Capability
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
t
(SCSOA)
P
T
T
T
T
M
Weight
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
BV
V
I
I
V
C25
C90
CM
SC
CES
GES
J
JM
stg
L
CGR
C
CES
GES
GEM
d
GE(th)
CE(sat)
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 30 mH
V
R
T
1.6 mm (0.063 in) from case for 10 s
Mounting torque
Test Conditions
I
I
V
V
V
I
C
C
C
C
C
C
C
J
J
GE
GE
G
CE
GE
CE
= 22 W, non repetitive
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 15 V, T
= 15 V, V
= 25°C
= 5 mA, V
= 4 mA, V
= 0.8 • V
= 0 V
= 0 V, V
= I
C90
, V
GE
J
CE
GE
CES
= 125°C, R
GE
CE
= 15 V
= 720 V, T
= ±20 V
= 0 V
= V
GE
IGBT
Diode
GE
G
= 1 MW
J
= 22 W
= 125°C
T
T
J
J
(T
= 25°C
= 125°C
J
= 25°C, unless otherwise specified)
IXSK35N120AU1
1200
min.
Characteristic Values
4
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
I
typ.
1.15/13 Nm/lb.in.
CM
1200
1200
= 70
±20
±30
140
300
190
150
300
CES
10
70
35
10
max.
±100
750
15
8
4
mA
ms
°C
°C
°C
°C
W
W
mA
nA
V
V
V
V
A
A
A
A
g
V
V
V
V
I
V
TO-264 AA
G = Gate,
E = Emitter,
Features
• International standard package
• High frequency IGBT and anti-parallel
• 2nd generation HDMOS
• Low V
• MOS Gate turn-on
• Fast Recovery Epitaxial Diode (FRED)
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
Advantages
• Space savings (two devices in one
• Easy to mount with one screw
• High power density
C25
JEDEC TO-264 AA
FRED in one package
- for minimum on-state conduction
- drive simplicity
- soft recovery with low I
power supplies
package)
(isolated mounting screw hole)
CES
CE(sat)
losses
G
C
CE(sat)
E
= 1200 V
=
=
C = Collector,
TAB = Collector
70 A
4 V
TM
RM
process
94526F(7/00)
C (TAB)
1 - 2

Related parts for 35N120AU1

35N120AU1 Summary of contents

Page 1

... GES CE(sat) C C90 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXSK35N120AU1 Maximum Ratings 1200 = 1 MW 1200 GE ±20 ± 140 = 0.8 V CES = 125° ...

Page 2

... 540 -di/dt = 200 A/ms thJC IXSK 35N120AU1 characteristic curves are located in the IXSH 35N120A data sheet, Publication No. D96001DE, pages 66 - 67. © 2000 IXYS All rights reserved Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max ...

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