BFG35 Philips Semiconductors, BFG35 Datasheet
BFG35
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BFG35 Summary of contents
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... DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 ...
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... dB 793.25 MHz; T (p+q r) amb CONDITIONS open emitter open base open collector 135 C (note Product specification BFG35 page 1 2 Top view Fig.1 SOT223. MIN. TYP. MAX. 18 150 750 = 25 C MIN. ...
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... 1 750 800 log -------------------------------------------------------- dB – amb = 25 C amb Product specification BFG35 UNIT 40 K/W MAX. UNIT GHz – ...
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... Product specification BFG35 CATALOGUE NO. 2222 590 08627 2222 851 12108 2222 629 08103 3122 108 20153 2322 180 73103 2322 180 73201 2322 180 73279 = 2.2) ...
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... NPN 4 GHz wideband transistor handbook, full pagewidth 75 input handbook, full pagewidth handbook, full pagewidth 1999 Aug Fig.3 Intermodulation test circuit printed circuit board. 5 Product specification output C7 MBB299 60 mm MBB298 MBB297 BFG35 ...
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... V ( 500 MHz Fig.7 6 Product specification 120 current gain as a function of collector current 120 Transition frequency as a function of collector current. BFG35 MBB361 160 (mA) C MBB357 160 (mA) ...
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... 800 mV 443.25 MHz (p+q r) Intermodulation distortion as a function of collector current dBmV 450 MHz (p+q) amb a function of collector current. BFG35 MBB385 100 120 I (mA amb MBB382 100 120 I (mA ...
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... Philips Semiconductors NPN 4 GHz wideband transistor 45 handbook, halfpage d 2 (dB dBmV 810 MHz (p+q) Fig.12 Second order intermodulation distortion as a function of collector current. 1999 Aug 24 MBB384 80 100 120 I (mA amb 8 Product specification BFG35 ...
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... Fig.14 Common emitter forward transmission coefficient (S 1999 Aug GHz 120 o 150 150 o 120 Product specification 100 250 100 250 250 100 MBB380 ). MBB286 ). 21 BFG35 ...
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... amb Fig.16 Common emitter output reflection coefficient (S 1999 Aug 120 o 150 o 0.1 120 Product specification 0.2 0.3 0.4 0.5 0 MBB285 ). 12 100 250 100 250 250 3 GHz 100 MBB379 ). 22 BFG35 ...
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... Philips Semiconductors NPN 4 GHz wideband transistor PACKAGE OUTLINE handbook, full pagewidth o 16 max 1.80 max Dimensions in mm. 1999 Aug 24 S seating plane 0.32 6.7 0.24 6.3 3.1 2.9 0.10 0. 2.3 max 4.6 Fig.17 SOT223. 11 0.95 0. 3.7 7.3 3.3 6 0.80 0 0.60 (4x) MSA035 - 1 Product specification BFG35 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Aug 24 12 Product specification BFG35 ...
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... Philips Semiconductors NPN 4 GHz wideband transistor 1999 Aug 24 NOTES 13 Product specification BFG35 ...
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... Philips Semiconductors NPN 4 GHz wideband transistor 1999 Aug 24 NOTES 14 Product specification BFG35 ...
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... Philips Semiconductors NPN 4 GHz wideband transistor 1999 Aug 24 NOTES 15 Product specification BFG35 ...
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... Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel ...