BFG591 Philips Semiconductors, BFG591 Datasheet

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BFG591

Manufacturer Part Number
BFG591
Description
Manufacturer
Philips Semiconductors
Datasheet

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Product specification
Supersedes data of November 1992
File under Discrete Semiconductors, SC14
DATA SHEET
BFG591
NPN 7 GHz wideband transistor
DISCRETE SEMICONDUCTORS
1995 Sep 04

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BFG591 Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET BFG591 NPN 7 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Sep 04 ...

Page 2

... GHz mA 900 MHz amb mA 900 MHz amb 2 Product specification BFG591 4 fpage 1 2 Top view MSB002 - 1 Fig.1 SOT223. MIN. TYP. MAX. UNIT 200 250 0 ...

Page 3

... Note to the Limiting values and Thermal characteristics the temperature at the soldering point of the collector pin. s 1995 Sep 04 CONDITIONS open emitter open base open collector note 1 s CONDITIONS note 1 3 Product specification BFG591 MIN. MAX. UNIT 200 +150 ...

Page 4

... 0 amb = 700 log ------------------------------------------------------------ dB – 793.25 MHz. (p+q-r) Product specification BFG591 MAX. UNIT 100 nA 250 pF GHz – ...

Page 5

... GHz; V Fig.5 5 Product specification current gain as a function of collector current, typical values (mA Transition frequency as a function of collector current, typical values. BFG591 MRA749 (mA) C MGC793 2 10 ...

Page 6

... Sep 04 MGC795 handbook, halfpage gain (dB) G max 120 I C (mA GHz; V MGC796 G max (MHz) 6 Product specification Fig.7 Gain as a function of collector current; typical values. BFG591 MGC794 G max G UM 120 I C (mA) ...

Page 7

... Sep 04 MGC797 handbook, halfpage d 2 (dB) 80 120 I C (mA Fig.10 Second order Intermodulation distortion as 7 Product specification 316 mV 810 MHz. o (p+q) a function of collector current; typical values. BFG591 MGC798 120 I C (mA) ...

Page 8

... Fig.12 Common emitter forward transmission coefficient (s 1995 Sep 135 0.5 3 GHz 0.2 0.2 0 0.2 0.5 o 135 135 40 MHz 3 GHz 135 Product specification 1 0.6 0 MHz MGC799 1.0 ); typical values MGC800 ); typical values. 21 BFG591 ...

Page 9

... Fig.14 Common emitter output reflection coefficient (s 1995 Sep 135 0.5 0.4 0.3 0.2 0.1 40 MHz o 135 135 0.5 0.2 3 GHz 0.2 0 0.2 0.5 o 135 Product specification GHz MGC801 ); typical values. 12 1 0.6 0 MHz MGC802 1.0 ); typical values. 22 BFG591 ...

Page 10

... Philips Semiconductors NPN 7 GHz wideband transistor SPICE parameters for the BFG591 crystal SEQUENCE No. PARAMETER VAF 5 IKF 6 ISE VAR 11 IKR 12 ISC IRB 16 RBM (1) 19 XTB ( (1) 21 XTI 22 CJE 23 VJE 24 MJE 25 TF ...

Page 11

... Philips Semiconductors NPN 7 GHz wideband transistor PACKAGE OUTLINE handbook, full pagewidth o 16 max 1.80 max Dimensions in mm. 1995 Sep 04 S seating plane 6.7 0.32 6.3 0.24 3.1 2.9 0.10 0. max 2.3 4.6 Fig.16 SOT223. 11 Product specification 0.95 0. 3.7 7.3 3.3 6 0.80 0 0.60 (4x) MSA035 - 1 BFG591 ...

Page 12

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Sep 04 12 Product specification BFG591 ...

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