BU2520DF

Manufacturer Part NumberBU2520DF
ManufacturerPhilips Semiconductors
BU2520DF datasheet
 
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Philips Semiconductors
Silicon Diffused Power Transistor
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic
envelope intended for use in horizontal deflection circuits of large screen colour television receivers.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V
Collector-emitter voltage peak value
CESM
V
Collector-emmiter voltage (open base)
CEO
I
Collector current (DC)
C
I
Collector current peak value
CM
P
Total power dissipation
tot
V
Collector-emitter saturation voltage
CEsat
I
Collector saturation current
Csat
V
Diode forward voltage
F
t
Fall time
f
PINNING - SOT199
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
Collector-emitter voltage peak value
CESM
V
Collector-emitter voltage (open base)
CEO
I
Collector current (DC)
C
I
Collector current peak value
CM
I
Base current (DC)
B
I
Base current peak value
BM
-I
Reverse base current
B(AV)
-I
Reverse base current peak value
BM
P
Total power dissipation
tot
T
Storage temperature
stg
T
Junction temperature
j
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
Junction to heatsink
th j-hs
R
Junction to ambient
th j-a
1 Turn-off current.
September 1997
CONDITIONS
V
= 0 V
BE
T
25 ˚C
hs
I
= 6.0 A; I
= 1.2 A
C
B
I
= 6.0 A
F
I
= 6.0 A; I
= 1.0 A
Csat
B(end)
PIN CONFIGURATION
case
1
2
3
CONDITIONS
V
= 0 V
BE
average over any 20 ms period
1
T
25 ˚C
hs
CONDITIONS
with heatsink compound
in free air
1
Product specification
BU2520DF
TYP.
MAX.
UNIT
-
1500
V
-
800
V
-
10
A
-
25
A
-
45
W
-
5.0
V
6
-
A
-
2.2
V
0.35
0.5
s
SYMBOL
c
b
Rbe
e
MIN.
MAX.
UNIT
-
1500
V
-
800
V
-
10
A
-
25
A
-
6
A
-
9
A
-
150
mA
-
6
A
-
45
W
-65
150
˚C
-
150
˚C
TYP.
MAX.
UNIT
-
2.8
K/W
35
-
K/W
Rev 1.400

BU2520DF Summary of contents